Monte Carlo simulation of the EBIC grain boundary contrast in semiconductors

Nouar Tabet, M. Ledra

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The electron beam induced current (EBIC) recombination contrast of grain boundaries (GB) is calculated by means of a Monte Carlo simulation algorithm. After considering a pointlike generation source, a three-dimensional distribution of pointlike sources is simulated and used to calculate the EBIC profiles across the grain boundary. In both cases, we observe a saturation of the maximum EBIC contrast as the carrier lifetime within the GB decreases. The results show, for a three dimensional electron probe, a linear dependence of the contrast on the GB width. In addition, extrapolated values of the maximum contrast obtained for a zero width GB are in good agreement with that calculated by analytical models.

Original languageEnglish
Pages (from-to)181-184
Number of pages4
JournalMaterials Science and Engineering B
Volume42
Issue number1-3
DOIs
Publication statusPublished - 15 Dec 1996
Externally publishedYes

Fingerprint

Induced currents
Electron beams
Grain boundaries
grain boundaries
electron beams
Semiconductor materials
simulation
Carrier lifetime
electron probes
carrier lifetime
Analytical models
Monte Carlo simulation
saturation
Electrons
profiles

Keywords

  • Electron beam induced current
  • Grain boundaries
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Monte Carlo simulation of the EBIC grain boundary contrast in semiconductors. / Tabet, Nouar; Ledra, M.

In: Materials Science and Engineering B, Vol. 42, No. 1-3, 15.12.1996, p. 181-184.

Research output: Contribution to journalArticle

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