Monte Carlo simulation of the EBIC grain boundary contrast in semiconductors

N. Tabet, M. Ledra

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The electron beam induced current (EBIC) recombination contrast of grain boundaries (GB) is calculated by means of a Monte Carlo simulation algorithm. After considering a pointlike generation source, a three-dimensional distribution of pointlike sources is simulated and used to calculate the EBIC profiles across the grain boundary. In both cases, we observe a saturation of the maximum EBIC contrast as the carrier lifetime within the GB decreases. The results show, for a three dimensional electron probe, a linear dependence of the contrast on the GB width. In addition, extrapolated values of the maximum contrast obtained for a zero width GB are in good agreement with that calculated by analytical models.

Original languageEnglish
Pages (from-to)181-184
Number of pages4
JournalMaterials Science and Engineering B
Volume42
Issue number1-3
DOIs
Publication statusPublished - 15 Dec 1996

Keywords

  • Electron beam induced current
  • Grain boundaries
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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