Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact

M. Ledra, Nouar Tabet

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have used a Monte Carlo (MC) algorithm to simulate the Electron Beam Induced Current (EBIC) collection efficiency of a nano-sized Schottky contact of radius rc perpendicular to the incident electron beam. The surface area around the metallic contact was assumed to be an infinite recombination velocity. The results show that, at low beam energies, the EBIC collection efficiency increases rapidly as the radius of the contact (rc) increases, and converges to a constant value as rc becomes comparable to the carrier diffusion length. At higher beam energies, the variation of the EBIC signal with rc is much slower because of the larger lateral extension of the generation volume. It is also shown that the maximum collection efficiency increases with the increase of the carrier diffusion length, and decreases as the incident beam energy increases, regardless of the size of the contact.

Original languageEnglish
Pages (from-to)444-450
Number of pages7
JournalSuperlattices and Microstructures
Volume45
Issue number4-5
DOIs
Publication statusPublished - 1 Apr 2009
Externally publishedYes

Fingerprint

Induced currents
Electron beams
electron beams
radii
diffusion length
simulation
energy
electric contacts
Monte Carlo simulation

Keywords

  • EBIC
  • Monte Carlo simulation
  • Nano Schottky contact
  • Semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact. / Ledra, M.; Tabet, Nouar.

In: Superlattices and Microstructures, Vol. 45, No. 4-5, 01.04.2009, p. 444-450.

Research output: Contribution to journalArticle

@article{21e6222644d1413795b5daa02bbb5b7c,
title = "Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact",
abstract = "We have used a Monte Carlo (MC) algorithm to simulate the Electron Beam Induced Current (EBIC) collection efficiency of a nano-sized Schottky contact of radius rc perpendicular to the incident electron beam. The surface area around the metallic contact was assumed to be an infinite recombination velocity. The results show that, at low beam energies, the EBIC collection efficiency increases rapidly as the radius of the contact (rc) increases, and converges to a constant value as rc becomes comparable to the carrier diffusion length. At higher beam energies, the variation of the EBIC signal with rc is much slower because of the larger lateral extension of the generation volume. It is also shown that the maximum collection efficiency increases with the increase of the carrier diffusion length, and decreases as the incident beam energy increases, regardless of the size of the contact.",
keywords = "EBIC, Monte Carlo simulation, Nano Schottky contact, Semiconductors",
author = "M. Ledra and Nouar Tabet",
year = "2009",
month = "4",
day = "1",
doi = "10.1016/j.spmi.2008.10.013",
language = "English",
volume = "45",
pages = "444--450",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4-5",

}

TY - JOUR

T1 - Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact

AU - Ledra, M.

AU - Tabet, Nouar

PY - 2009/4/1

Y1 - 2009/4/1

N2 - We have used a Monte Carlo (MC) algorithm to simulate the Electron Beam Induced Current (EBIC) collection efficiency of a nano-sized Schottky contact of radius rc perpendicular to the incident electron beam. The surface area around the metallic contact was assumed to be an infinite recombination velocity. The results show that, at low beam energies, the EBIC collection efficiency increases rapidly as the radius of the contact (rc) increases, and converges to a constant value as rc becomes comparable to the carrier diffusion length. At higher beam energies, the variation of the EBIC signal with rc is much slower because of the larger lateral extension of the generation volume. It is also shown that the maximum collection efficiency increases with the increase of the carrier diffusion length, and decreases as the incident beam energy increases, regardless of the size of the contact.

AB - We have used a Monte Carlo (MC) algorithm to simulate the Electron Beam Induced Current (EBIC) collection efficiency of a nano-sized Schottky contact of radius rc perpendicular to the incident electron beam. The surface area around the metallic contact was assumed to be an infinite recombination velocity. The results show that, at low beam energies, the EBIC collection efficiency increases rapidly as the radius of the contact (rc) increases, and converges to a constant value as rc becomes comparable to the carrier diffusion length. At higher beam energies, the variation of the EBIC signal with rc is much slower because of the larger lateral extension of the generation volume. It is also shown that the maximum collection efficiency increases with the increase of the carrier diffusion length, and decreases as the incident beam energy increases, regardless of the size of the contact.

KW - EBIC

KW - Monte Carlo simulation

KW - Nano Schottky contact

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=62949226601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62949226601&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2008.10.013

DO - 10.1016/j.spmi.2008.10.013

M3 - Article

AN - SCOPUS:62949226601

VL - 45

SP - 444

EP - 450

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 4-5

ER -