Monte Carlo simulation of the charge collection contrast of spherical defects in semiconductors

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The electron-beam-induced current contrast of a spherical defect near a Schottky contact has been calculated using a Monte Carlo algorithm. The collected current has been calculated by simulating the diffusion/recombination process of the carriers that are generated at point-like sources randomly distributed within the generation volume. The maximum contrast dependence upon the defect radius has been simulated. For a small size defect, the results show a good agreement with that obtained by using an analytical model. Computations have also been performed for a large size defect for which an analytical solution is too difficult.

Original languageEnglish
Pages (from-to)1392-1395
Number of pages4
JournalSemiconductor Science and Technology
Volume13
Issue number12
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes

Fingerprint

Semiconductor materials
Defects
defects
simulation
Induced currents
point sources
Analytical models
electric contacts
Electron beams
electron beams
radii
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Monte Carlo simulation of the charge collection contrast of spherical defects in semiconductors. / Tabet, Nouar.

In: Semiconductor Science and Technology, Vol. 13, No. 12, 01.12.1998, p. 1392-1395.

Research output: Contribution to journalArticle

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