Molecular beam epitaxy of CdSexTe1-x photovoltaic junctions on silicon substrates

Kevin Clark, E. Maldonado, M. Schuller, W. P. Kirk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The II-VI semiconductor cadmium selenide telluride CdSeTe was grown by MBE on silicon. The large lattice mismatch to the silicon was accommodated in smaller steps using a beryllium telluride - zinc telluride buffer layer. A CdTe film grown on this buffer had about three times narrower x-ray diffraction peak than a CdSe0.40Te0.60 alloy. Photojunction devices were formed into mesa structures with n+Si / p+BeTe p-type bottom contacts and n-type CdSe top emitter layers, with thin (≪1 μm) CdSeTe base layers. The photocurrent of junctions with CdTe base layers was about an order of magnitude greater than those with the CdSe 0.40Te0.60 alloy, most likely due to short minority carrier lifetime in the ternary.

Original languageEnglish
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
Publication statusPublished - 1 Dec 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: 11 May 200816 May 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period11/5/0816/5/08

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Clark, K., Maldonado, E., Schuller, M., & Kirk, W. P. (2008). Molecular beam epitaxy of CdSexTe1-x photovoltaic junctions on silicon substrates. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922875] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922875