MOCVD of high-TC superconducting materials

K. H. Dahmen, T. Gerfin

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

This present review gives a short overview of new developments of techniques and precursors for metalorganic chemical vapor deposition (MOCVD) in the field of high Tc superconducting (HTS) materials. Especially, the search for new precursors will be discussed in detail. The substrates and buffer layer systems, which have been used for HTS materials will be presented with respect to observed properties of the films. Finally, the physical properties and possible applications will be discussed briefly.

Original languageEnglish
Pages (from-to)117-161
Number of pages45
JournalProgress in Crystal Growth and Characterization of Materials
Volume27
Issue number2
Publication statusPublished - 1 Dec 1993
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
Superconducting materials
metalorganic chemical vapor deposition
buffers
physical properties
Buffer layers
Physical properties
Substrates

Keywords

  • buffer layers
  • MOCVD
  • precursors
  • substrates
  • superconductors
  • thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

MOCVD of high-TC superconducting materials. / Dahmen, K. H.; Gerfin, T.

In: Progress in Crystal Growth and Characterization of Materials, Vol. 27, No. 2, 01.12.1993, p. 117-161.

Research output: Contribution to journalArticle

Dahmen, K. H. ; Gerfin, T. / MOCVD of high-TC superconducting materials. In: Progress in Crystal Growth and Characterization of Materials. 1993 ; Vol. 27, No. 2. pp. 117-161.
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