MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire

Y. Gao, S. Thevuthasan, D. E. McCready, M. Engelhard

Research output: Contribution to journalArticle

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Abstract

Nb- and V-doped TiO2 thin films at a doping level up to 20 and 40 at%, respectively, have been grown on sapphire (0 0 0 1), (1 1 2̄0), and (0 1 1̄2) by metalorganic chemical vapor deposition. The Nb-doped TiO2 films are epitaxial rutile films, but the V-doped TiO2 films exhibit phase separation. The epitaxial orientation relationships for the Nb-doped TiO2 films were determined by X-ray diffraction (φ scans). Rutherford backscattering and X-ray θ rocking curves reveal that the atomic alignment in the growth direction is much better for the Nb-doped TiO2 grown on sapphire (0 0 0 1) than on sapphire (1 1 2̄0) and (0 1 1̄2). On the other hand, the in-plane alignment for the latter films is better than that for the former. Rutherford backscattering also shows that Nb atoms substitutionally incorporate at cation sites in the rutile lattice. X-ray photoelectron spectroscopy reveals that the oxidation state of both Ti and Nb is 4+. In contrast, XPS shows Ti4+ and V5+ for the V-doped TiO2 films. X-ray diffraction and atomic force microscopy indicate that the V-doped TiO2 films are comprised of epitaxial TiO2 rutile islands in a V2O5 matrix.

Original languageEnglish
Pages (from-to)178-190
Number of pages13
JournalJournal of Crystal Growth
Volume212
Issue number1
DOIs
Publication statusPublished - 2000
Externally publishedYes

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Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
Rutherford backscattering spectroscopy
rutile
X ray photoelectron spectroscopy
X ray diffraction
backscattering
x rays
Epitaxial films
alignment
Phase separation
Cations
Atomic force microscopy
Doping (additives)
diffraction
X rays
Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire. / Gao, Y.; Thevuthasan, S.; McCready, D. E.; Engelhard, M.

In: Journal of Crystal Growth, Vol. 212, No. 1, 2000, p. 178-190.

Research output: Contribution to journalArticle

Gao, Y, Thevuthasan, S, McCready, DE & Engelhard, M 2000, 'MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire', Journal of Crystal Growth, vol. 212, no. 1, pp. 178-190. https://doi.org/10.1016/S0022-0248(00)00010-5
Gao, Y. ; Thevuthasan, S. ; McCready, D. E. ; Engelhard, M. / MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire. In: Journal of Crystal Growth. 2000 ; Vol. 212, No. 1. pp. 178-190.
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