MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire

Y. Gao, S. Thevuthasan, D. E. McCready, M. Engelhard

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    Abstract

    Nb- and V-doped TiO2 thin films at a doping level up to 20 and 40 at%, respectively, have been grown on sapphire (0 0 0 1), (1 1 2̄0), and (0 1 1̄2) by metalorganic chemical vapor deposition. The Nb-doped TiO2 films are epitaxial rutile films, but the V-doped TiO2 films exhibit phase separation. The epitaxial orientation relationships for the Nb-doped TiO2 films were determined by X-ray diffraction (φ scans). Rutherford backscattering and X-ray θ rocking curves reveal that the atomic alignment in the growth direction is much better for the Nb-doped TiO2 grown on sapphire (0 0 0 1) than on sapphire (1 1 2̄0) and (0 1 1̄2). On the other hand, the in-plane alignment for the latter films is better than that for the former. Rutherford backscattering also shows that Nb atoms substitutionally incorporate at cation sites in the rutile lattice. X-ray photoelectron spectroscopy reveals that the oxidation state of both Ti and Nb is 4+. In contrast, XPS shows Ti4+ and V5+ for the V-doped TiO2 films. X-ray diffraction and atomic force microscopy indicate that the V-doped TiO2 films are comprised of epitaxial TiO2 rutile islands in a V2O5 matrix.

    Original languageEnglish
    Pages (from-to)178-190
    Number of pages13
    JournalJournal of Crystal Growth
    Volume212
    Issue number1
    DOIs
    Publication statusPublished - 1 Jan 2000

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    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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