Microstructure of Co-doped Ti O2 (110) rutile by ion implantation

C. M. Wang, V. Shutthanandan, S. Thevuthasan, T. Droubay, S. A. Chambers

Research output: Contribution to journalArticle

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Abstract

Co-doped rutile Ti O2 was synthesized by injecting Co ions into single crystal rutile Ti O2 using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy, electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile Ti O2 lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25× 1016 Co cm2. Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding Ti O2 matrix exhibit the orientation relationships Co 〈110〉 ∥Ti O2 [001] and Co {111} ∥Ti O2 (110). A structural model representing the interface between Co metal clusters and Ti O2 is developed based on HRTEM imaging and image simulations.

Original languageEnglish
Article number073502
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
Publication statusPublished - 1 Apr 2005
Externally publishedYes

Fingerprint

rutile
ion implantation
metal clusters
microstructure
transmission electron microscopy
high resolution
ions
point defects
x ray spectroscopy
implantation
spatial distribution
fluence
electron diffraction
simulation
energy
single crystals
matrices

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Wang, C. M., Shutthanandan, V., Thevuthasan, S., Droubay, T., & Chambers, S. A. (2005). Microstructure of Co-doped Ti O2 (110) rutile by ion implantation. Journal of Applied Physics, 97(7), [073502]. https://doi.org/10.1063/1.1866482

Microstructure of Co-doped Ti O2 (110) rutile by ion implantation. / Wang, C. M.; Shutthanandan, V.; Thevuthasan, S.; Droubay, T.; Chambers, S. A.

In: Journal of Applied Physics, Vol. 97, No. 7, 073502, 01.04.2005.

Research output: Contribution to journalArticle

Wang, CM, Shutthanandan, V, Thevuthasan, S, Droubay, T & Chambers, SA 2005, 'Microstructure of Co-doped Ti O2 (110) rutile by ion implantation', Journal of Applied Physics, vol. 97, no. 7, 073502. https://doi.org/10.1063/1.1866482
Wang CM, Shutthanandan V, Thevuthasan S, Droubay T, Chambers SA. Microstructure of Co-doped Ti O2 (110) rutile by ion implantation. Journal of Applied Physics. 2005 Apr 1;97(7). 073502. https://doi.org/10.1063/1.1866482
Wang, C. M. ; Shutthanandan, V. ; Thevuthasan, S. ; Droubay, T. ; Chambers, S. A. / Microstructure of Co-doped Ti O2 (110) rutile by ion implantation. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 7.
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