Microstructure of Co-doped Ti O2 (110) rutile by ion implantation

C. M. Wang, V. Shutthanandan, S. Thevuthasan, T. Droubay, S. A. Chambers

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Co-doped rutile Ti O2 was synthesized by injecting Co ions into single crystal rutile Ti O2 using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy, electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile Ti O2 lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25× 1016 Co cm2. Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding Ti O2 matrix exhibit the orientation relationships Co 〈110〉 ∥Ti O2 [001] and Co {111} ∥Ti O2 (110). A structural model representing the interface between Co metal clusters and Ti O2 is developed based on HRTEM imaging and image simulations.

Original languageEnglish
Article number073502
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 1 Apr 2005
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Wang, C. M., Shutthanandan, V., Thevuthasan, S., Droubay, T., & Chambers, S. A. (2005). Microstructure of Co-doped Ti O2 (110) rutile by ion implantation. Journal of Applied Physics, 97(7), [073502]. https://doi.org/10.1063/1.1866482