Memristor system properties and its design applications to circuits such as nonvolatile memristor memories

Garng Morton Huang, Yenpo Ho, Peng Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Novel nonvolatile universal memory technology is essential for providing required storage for nano-computing. As a potential contender for the next-generation memory, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations that assumes constant ion mobility, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to, but not limited to, memory operations. However, like many nano devices, a small voltage drop across the memristor will yield an enormous electric field, which may produce significant highly nonlinear ionic transport that the linear drift assumption no longer holds for realistic memristors. Issues such as how to design circuits facing such nonlinear drift will be discussed. In addition, issues such as how to sense the memory states and perturbations during sensing will be addressed. In this paper, we demonstrate that we can successfully use the derived properties based on the linear drift model to design read and write circuits and analyze important data integrity and noise-tolerance issues for realistic nonlinear drift models.

Original languageEnglish
Title of host publication2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings
Pages805-810
Number of pages6
DOIs
Publication statusPublished - 19 Nov 2010
Externally publishedYes
Event2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Chengdu, China
Duration: 28 Jul 201030 Jul 2010

Other

Other2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010
CountryChina
CityChengdu
Period28/7/1030/7/10

Fingerprint

Memristors
Data storage equipment
Networks (circuits)
Electric fields
Ions

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Huang, G. M., Ho, Y., & Li, P. (2010). Memristor system properties and its design applications to circuits such as nonvolatile memristor memories. In 2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings (pp. 805-810). [5581867] https://doi.org/10.1109/ICCCAS.2010.5581867

Memristor system properties and its design applications to circuits such as nonvolatile memristor memories. / Huang, Garng Morton; Ho, Yenpo; Li, Peng.

2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings. 2010. p. 805-810 5581867.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, GM, Ho, Y & Li, P 2010, Memristor system properties and its design applications to circuits such as nonvolatile memristor memories. in 2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings., 5581867, pp. 805-810, 2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010, Chengdu, China, 28/7/10. https://doi.org/10.1109/ICCCAS.2010.5581867
Huang GM, Ho Y, Li P. Memristor system properties and its design applications to circuits such as nonvolatile memristor memories. In 2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings. 2010. p. 805-810. 5581867 https://doi.org/10.1109/ICCCAS.2010.5581867
Huang, Garng Morton ; Ho, Yenpo ; Li, Peng. / Memristor system properties and its design applications to circuits such as nonvolatile memristor memories. 2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings. 2010. pp. 805-810
@inproceedings{20d1bae86571490fb6ec4d60df2e6950,
title = "Memristor system properties and its design applications to circuits such as nonvolatile memristor memories",
abstract = "Novel nonvolatile universal memory technology is essential for providing required storage for nano-computing. As a potential contender for the next-generation memory, the recently found {"}the missing fourth circuit element{"}, memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations that assumes constant ion mobility, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to, but not limited to, memory operations. However, like many nano devices, a small voltage drop across the memristor will yield an enormous electric field, which may produce significant highly nonlinear ionic transport that the linear drift assumption no longer holds for realistic memristors. Issues such as how to design circuits facing such nonlinear drift will be discussed. In addition, issues such as how to sense the memory states and perturbations during sensing will be addressed. In this paper, we demonstrate that we can successfully use the derived properties based on the linear drift model to design read and write circuits and analyze important data integrity and noise-tolerance issues for realistic nonlinear drift models.",
author = "Huang, {Garng Morton} and Yenpo Ho and Peng Li",
year = "2010",
month = "11",
day = "19",
doi = "10.1109/ICCCAS.2010.5581867",
language = "English",
isbn = "9781424482238",
pages = "805--810",
booktitle = "2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings",

}

TY - GEN

T1 - Memristor system properties and its design applications to circuits such as nonvolatile memristor memories

AU - Huang, Garng Morton

AU - Ho, Yenpo

AU - Li, Peng

PY - 2010/11/19

Y1 - 2010/11/19

N2 - Novel nonvolatile universal memory technology is essential for providing required storage for nano-computing. As a potential contender for the next-generation memory, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations that assumes constant ion mobility, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to, but not limited to, memory operations. However, like many nano devices, a small voltage drop across the memristor will yield an enormous electric field, which may produce significant highly nonlinear ionic transport that the linear drift assumption no longer holds for realistic memristors. Issues such as how to design circuits facing such nonlinear drift will be discussed. In addition, issues such as how to sense the memory states and perturbations during sensing will be addressed. In this paper, we demonstrate that we can successfully use the derived properties based on the linear drift model to design read and write circuits and analyze important data integrity and noise-tolerance issues for realistic nonlinear drift models.

AB - Novel nonvolatile universal memory technology is essential for providing required storage for nano-computing. As a potential contender for the next-generation memory, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations that assumes constant ion mobility, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to, but not limited to, memory operations. However, like many nano devices, a small voltage drop across the memristor will yield an enormous electric field, which may produce significant highly nonlinear ionic transport that the linear drift assumption no longer holds for realistic memristors. Issues such as how to design circuits facing such nonlinear drift will be discussed. In addition, issues such as how to sense the memory states and perturbations during sensing will be addressed. In this paper, we demonstrate that we can successfully use the derived properties based on the linear drift model to design read and write circuits and analyze important data integrity and noise-tolerance issues for realistic nonlinear drift models.

UR - http://www.scopus.com/inward/record.url?scp=78249231761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78249231761&partnerID=8YFLogxK

U2 - 10.1109/ICCCAS.2010.5581867

DO - 10.1109/ICCCAS.2010.5581867

M3 - Conference contribution

SN - 9781424482238

SP - 805

EP - 810

BT - 2010 International Conference on Communications, Circuits and Systems, ICCCAS 2010 - Proceedings

ER -