Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

Brahim Aissa, M. Nedil, J. Kroeger, T. Haddad, F. Rosei

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We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10<sup>4</sup> and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10<sup>4</sup> s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

Original languageEnglish
Article number124507
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 28 Sep 2015


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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