Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

Brahim Aissa, M. Nedil, J. Kroeger, T. Haddad, F. Rosei

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10<sup>4</sup> and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10<sup>4</sup> s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

Original languageEnglish
Article number124507
JournalJournal of Applied Physics
Volume118
Issue number12
DOIs
Publication statusPublished - 28 Sep 2015

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transistors
illumination
carbon nanotubes
thin films
programming
field effect transistors
trapping
room temperature
electronics
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors. / Aissa, Brahim; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

In: Journal of Applied Physics, Vol. 118, No. 12, 124507, 28.09.2015.

Research output: Contribution to journalArticle

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