Memory effect in an aluminum single-electron floating-node memory cell

Jinhee Kim, Sangchul Oh, Kyung Hwa Yoo, Jong Wan Park, Jeong O. Lee, Jung Bum Choi, Se Il Park, Ju Jin Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.

Original languageEnglish
Pages (from-to)4826-4829
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number8
Publication statusPublished - 1 Aug 2000
Externally publishedYes

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floating
aluminum
Aluminum
Data storage equipment
Electrons
Electric potential
cells
Single electron transistors
oscillations
electric potential
electrons
Field emission
single electron transistors
field emission

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Memory effect in an aluminum single-electron floating-node memory cell. / Kim, Jinhee; Oh, Sangchul; Yoo, Kyung Hwa; Park, Jong Wan; Lee, Jeong O.; Choi, Jung Bum; Park, Se Il; Kim, Ju Jin.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 8, 01.08.2000, p. 4826-4829.

Research output: Contribution to journalArticle

Kim, Jinhee ; Oh, Sangchul ; Yoo, Kyung Hwa ; Park, Jong Wan ; Lee, Jeong O. ; Choi, Jung Bum ; Park, Se Il ; Kim, Ju Jin. / Memory effect in an aluminum single-electron floating-node memory cell. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2000 ; Vol. 39, No. 8. pp. 4826-4829.
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