Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films

Y. Gao, C. L. Perkins, S. He, P. Alluri, T. Tran, S. Thevuthasan, M. A. Henderson

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The metalorganic precursor chemistry was studied on Pt(111) surfaces in a 16O2 and 18O2 backgrounds. Using temperature programmed desorption (TPD) and static secondary ion mass spectrometry (SIMS). The precursor chemistry of Sr(thd)2 was found to be different on oxide covered Pt(111) surface as compared to the clean Pt(111) surface. In an oxygen ambient, TPD showed at least four different reaction processes which involved the removal of carbon from the precursor ligands on oxide covered Pt(111). In two of these, gas phase oxygen was incorporated into the oxidative products. In contrast, one carbon removing reaction was observed on the clean Pt(111) surface. Isotopic labeling experiments have also been carried out to understand the film-formation reactions in the metalorganic chemical vapor deposition of (Ba,Sr)TiO3 (BST) films. Time-of-flight SIMS and nuclear reaction analysis reveal that the oxygen in the BST films originates from both the gas phase oxidants (18O) and the precursor ligands (16O). The ligand substitution by gas phase O2 plays a more prominent role in the film formation at lower temperatures. On the other hand, the reactive oxygen radicals produced by microwave plasma involved more in breaking the O-C bonds than substituting the precursor ligands for the film formation. Use of the 50% 18O2-50% N2 16O2 mixture results in a reduction of 18O incorporation in the BST films, indicative of the direct involvement of N2O in the film-formation reactions. The mechanistic studies are essential for understanding the new BST precursors used in this study, and provide useful information to correlate the film microstructure, step coverage, and dielectric properties with the precursor properties.

Original languageEnglish
Pages (from-to)7430-7437
Number of pages8
JournalJournal of Applied Physics
Volume87
Issue number10
Publication statusPublished - 15 May 2000
Externally publishedYes

Fingerprint

metalorganic chemical vapor deposition
thin films
ligands
oxygen
vapor phases
secondary ion mass spectrometry
desorption
chemistry
isotopic labeling
oxides
carbon
nuclear reactions
ambient temperature
dielectric properties
substitutes
microwaves
microstructure
products

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Gao, Y., Perkins, C. L., He, S., Alluri, P., Tran, T., Thevuthasan, S., & Henderson, M. A. (2000). Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films. Journal of Applied Physics, 87(10), 7430-7437.

Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films. / Gao, Y.; Perkins, C. L.; He, S.; Alluri, P.; Tran, T.; Thevuthasan, S.; Henderson, M. A.

In: Journal of Applied Physics, Vol. 87, No. 10, 15.05.2000, p. 7430-7437.

Research output: Contribution to journalArticle

Gao, Y, Perkins, CL, He, S, Alluri, P, Tran, T, Thevuthasan, S & Henderson, MA 2000, 'Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films', Journal of Applied Physics, vol. 87, no. 10, pp. 7430-7437.
Gao Y, Perkins CL, He S, Alluri P, Tran T, Thevuthasan S et al. Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films. Journal of Applied Physics. 2000 May 15;87(10):7430-7437.
Gao, Y. ; Perkins, C. L. ; He, S. ; Alluri, P. ; Tran, T. ; Thevuthasan, S. ; Henderson, M. A. / Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 10. pp. 7430-7437.
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