Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1)

P. F. Lyman, S. Thevuthasan, L. E. Seiberling

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have studied the structure of 1 to 10 monolayer (ML) Ge films grown at room temperature on Si(100)-(2 × 1). Using transmission ion channeling spectroscopy, we have uncovered the first evidence for pseudomorphic structure in these films, contradicting the widely-held belief of amorphous growth at temperatures below 500 K. A model is proposed for growth of pseudomorphic domains, which constitute roughly half of the Ge films up to a critical thickness ( ∼ 4 ML) after which strain is relieved through defect introduction.

Original languageEnglish
Pages (from-to)45-52
Number of pages8
JournalJournal of Crystal Growth
Volume113
Issue number1-2
DOIs
Publication statusPublished - 1991
Externally publishedYes

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Growth temperature
Monolayers
Spectroscopy
Ions
Temperature
Defects
defects
room temperature
spectroscopy
ions
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1). / Lyman, P. F.; Thevuthasan, S.; Seiberling, L. E.

In: Journal of Crystal Growth, Vol. 113, No. 1-2, 1991, p. 45-52.

Research output: Contribution to journalArticle

Lyman, P. F. ; Thevuthasan, S. ; Seiberling, L. E. / Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1). In: Journal of Crystal Growth. 1991 ; Vol. 113, No. 1-2. pp. 45-52.
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