Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1)

P. F. Lyman, S. Thevuthasan, L. E. Seiberling

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Abstract

We have studied the structure of 1 to 10 monolayer (ML) Ge films grown at room temperature on Si(100)-(2 × 1). Using transmission ion channeling spectroscopy, we have uncovered the first evidence for pseudomorphic structure in these films, contradicting the widely-held belief of amorphous growth at temperatures below 500 K. A model is proposed for growth of pseudomorphic domains, which constitute roughly half of the Ge films up to a critical thickness ( ∼ 4 ML) after which strain is relieved through defect introduction.

Original languageEnglish
Pages (from-to)45-52
Number of pages8
JournalJournal of Crystal Growth
Volume113
Issue number1-2
DOIs
Publication statusPublished - 1991
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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