Low pressure organometallic chemical vapor deposition of high-Tc superconducting YBa2Cu3O7-δ films

Jing Zhao, Klaus Hermann Dahmen, Henry O. Marcy, Lauren M. Tonge, Bruce W. Wessels, Tobin J. Marks, Carl R. Kannewurf

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Abstract

High-Tc superconducting YBa2Cu3O7-δ films have been prepared by low-pressure organometallic chemical vapor deposition using Cu(acetylacetonate)2, Y(dipivaloylmethanate)3, and Ba(dipivaloylmethanate)2 as volatile metal-organic precursors. An argon carrier gas is employed and water vapor serves as the reactant. Film growth rates of 10-30 nm min-1 are achieved at a system pressure of 5 torr. After annealing under oxygen, the YBa2Cu3O7-δ films deposited on SrTiO3 exhibit excellent compositional and structural uniformity in addition to preferential orientation of crystalline c axes perpendicular to the SrTiO3 surface. The onset of superconductivity is at ca. 90 K and zero resistance is achieved by 47 K.

Original languageEnglish
Pages (from-to)187-189
Number of pages3
JournalSolid State Communications
Volume69
Issue number2
DOIs
Publication statusPublished - Jan 1989

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Zhao, J., Dahmen, K. H., Marcy, H. O., Tonge, L. M., Wessels, B. W., Marks, T. J., & Kannewurf, C. R. (1989). Low pressure organometallic chemical vapor deposition of high-Tc superconducting YBa2Cu3O7-δ films. Solid State Communications, 69(2), 187-189. https://doi.org/10.1016/0038-1098(89)90389-X