Loss analysis during dead time and thermal study of gallium nitride devices

Haiyu Zhang, Robert Balog

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

By virtue of the advantages in breakdown field strength and saturated electron speed, gallium nitride field-effect transistors (GaN FETs) have been attracting attentions as next generation power devices in recent years. Compared with silicon-based metal-oxidesemiconductor field-effect transistors (MOSFETs), GaN FETs have no intrinsic anti-parallel body diodes and exhibit poor reverse conduction characteristics. Thus it is necessary to optimize the dead time to not only avoid shoot-through current during the transient period in the single phase leg structure, but also to minimize reverse conduction power losses. Another characteristic of GaN FETs is their relatively low thermal conductivity. To satisfy the demands of higher power density, the thermal performance and cooling requirements of GaN FETs should be evaluated. In this paper, loss analysis during dead time and the thermal study of GaN FETs are presented. As a case study, a 200W GaN FETs based resonant converter is considered. The simulation and experimental results verify the validity of the theoretical analysis.

Original languageEnglish
Title of host publicationAPEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages737-744
Number of pages8
Volume2015-May
EditionMay
DOIs
Publication statusPublished - 8 May 2015
Externally publishedYes
Event30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015 - Charlotte, United States
Duration: 15 Mar 201519 Mar 2015

Other

Other30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
CountryUnited States
CityCharlotte
Period15/3/1519/3/15

Fingerprint

Gallium nitride
Field effect transistors
Hot Temperature
Power generation
Thermal conductivity
Diodes
Cooling
Silicon
Electrons
Metals

Keywords

  • Body diodes
  • GaN FETs
  • Resonant converter
  • Reverse conduction loss
  • Thermal study

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Zhang, H., & Balog, R. (2015). Loss analysis during dead time and thermal study of gallium nitride devices. In APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition (May ed., Vol. 2015-May, pp. 737-744). [7104432] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2015.7104432

Loss analysis during dead time and thermal study of gallium nitride devices. / Zhang, Haiyu; Balog, Robert.

APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition. Vol. 2015-May May. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 737-744 7104432.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, H & Balog, R 2015, Loss analysis during dead time and thermal study of gallium nitride devices. in APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition. May edn, vol. 2015-May, 7104432, Institute of Electrical and Electronics Engineers Inc., pp. 737-744, 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015, Charlotte, United States, 15/3/15. https://doi.org/10.1109/APEC.2015.7104432
Zhang H, Balog R. Loss analysis during dead time and thermal study of gallium nitride devices. In APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition. May ed. Vol. 2015-May. Institute of Electrical and Electronics Engineers Inc. 2015. p. 737-744. 7104432 https://doi.org/10.1109/APEC.2015.7104432
Zhang, Haiyu ; Balog, Robert. / Loss analysis during dead time and thermal study of gallium nitride devices. APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition. Vol. 2015-May May. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 737-744
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