Laser detection of radiation enhanced electron transport in ultra-thin oxides

R. Pasternak, Y. V. Shirokaya, Z. Marka, J. K. Miller, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, B. K. Choi, R. D. Schrimpf, D. M. Fleetwood

Research output: Contribution to journalConference article

5 Citations (Scopus)


Electron transport in a variable-thickness ultra-thin SiO 2-on-Si structure (1.0-6.5nm) is observed to be enhanced substantially by X-ray radiation-induced damage as detected by a novel fast-pulsed laser technique. This method involves optically stimulated electron injection into the oxide followed by detection of transport, trapping and recombination rates using time-dependent electric-field induced second-harmonic generation (EFISH) arising from charge separation at the interface. This detection technique provides a contactless, noninvasive alternative to electrical characterization.

Original languageEnglish
Pages (from-to)150-155
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-3
Publication statusPublished - 21 Nov 2003
EventProceedings of the 4th International Conference on Radiation (RESMDDo2) -
Duration: 10 Jul 200212 Jul 2002


  • 2-nd harmonic generation
  • Induced leakage current
  • Silicon
  • Thin gate oxides

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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