KRXPS study of the oxidation of Ge(001) surface

Nouar Tabet, Mushtaq A. Salim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

Original languageEnglish
Pages (from-to)275-282
Number of pages8
JournalApplied Surface Science
Volume134
Issue number1-4
Publication statusPublished - 1 Sep 1998
Externally publishedYes

Fingerprint

X ray photoelectron spectroscopy
photoelectron spectroscopy
Oxidation
oxidation
Kinetics
kinetics
Germanium oxides
germanium oxides
x rays
stems
Etching
contamination
Contamination
etching
Oxygen
Decomposition
decomposition
atmospheres
air
oxygen

Keywords

  • Ge oxidation
  • Semiconductor surface
  • XPS

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

KRXPS study of the oxidation of Ge(001) surface. / Tabet, Nouar; Salim, Mushtaq A.

In: Applied Surface Science, Vol. 134, No. 1-4, 01.09.1998, p. 275-282.

Research output: Contribution to journalArticle

Tabet, N & Salim, MA 1998, 'KRXPS study of the oxidation of Ge(001) surface', Applied Surface Science, vol. 134, no. 1-4, pp. 275-282.
Tabet, Nouar ; Salim, Mushtaq A. / KRXPS study of the oxidation of Ge(001) surface. In: Applied Surface Science. 1998 ; Vol. 134, No. 1-4. pp. 275-282.
@article{be30caef74b846bab1131fa0efed3e4b,
title = "KRXPS study of the oxidation of Ge(001) surface",
abstract = "The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.",
keywords = "Ge oxidation, Semiconductor surface, XPS",
author = "Nouar Tabet and Salim, {Mushtaq A.}",
year = "1998",
month = "9",
day = "1",
language = "English",
volume = "134",
pages = "275--282",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - KRXPS study of the oxidation of Ge(001) surface

AU - Tabet, Nouar

AU - Salim, Mushtaq A.

PY - 1998/9/1

Y1 - 1998/9/1

N2 - The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

AB - The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

KW - Ge oxidation

KW - Semiconductor surface

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0032167268&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032167268&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032167268

VL - 134

SP - 275

EP - 282

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -