KRXPS study of the oxidation of Ge(001) surface

Nouar Tabet, Mushtaq A. Salim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The oxidation of the chemically etched Ge(001) surface has been investigated by means of kinetic resolved X-ray photoelectron spectroscopy (KRXPS). In situ oxidation treatments have been carried out at T = 250°C, under 0.5 atm of pure oxygen atmosphere and for different durations. We propose a two step oxidation model. First, the bare portions of the surface are oxidized. Then, follows a lateral growth of the germanium oxide islands. The process is assisted by the decomposition of the overlayer that stems from the chemical etching and the air contamination. The model gives a consistent interpretation of the KRXPS measurements.

Original languageEnglish
Pages (from-to)275-282
Number of pages8
JournalApplied Surface Science
Volume134
Issue number1-4
Publication statusPublished - 1 Sep 1998
Externally publishedYes

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Keywords

  • Ge oxidation
  • Semiconductor surface
  • XPS

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

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