Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, R. Grötzschel

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

RBS/channeling (RBS/C) has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H2+ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At fluences below 1.5×1016 H+ cm-2, isochronal recovery occurs gradually over a wide temperature range. Above a fluence of 1.5×1017 H+ cm-2, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences between 4.5×1016 and 1.0×1017 H+ cm-2, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for silicon carbide (SiC) irradiated at 100 K and subsequently annealed at 1070 K for 20 min.

Original languageEnglish
Pages (from-to)374-378
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume166
DOIs
Publication statusPublished - 2 May 2000
Externally publishedYes

Fingerprint

Silicon carbide
silicon carbides
recovery
Irradiation
Annealing
fluence
Recovery
irradiation
annealing
Hydrogen
disorders
Ions
damage
blisters
hydrogen
sublattices
ions
Hot Temperature
silicon carbide
Single crystals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Grötzschel, R.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 166, 02.05.2000, p. 374-378.

Research output: Contribution to journalArticle

@article{2562696e800f44a1aea747ec3506e184,
title = "Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiC",
abstract = "RBS/channeling (RBS/C) has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H2+ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At fluences below 1.5×1016 H+ cm-2, isochronal recovery occurs gradually over a wide temperature range. Above a fluence of 1.5×1017 H+ cm-2, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences between 4.5×1016 and 1.0×1017 H+ cm-2, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30{\%} is observed for silicon carbide (SiC) irradiated at 100 K and subsequently annealed at 1070 K for 20 min.",
author = "W. Jiang and Weber, {W. J.} and S. Thevuthasan and R. Gr{\"o}tzschel",
year = "2000",
month = "5",
day = "2",
doi = "10.1016/S0168-583X(99)01050-2",
language = "English",
volume = "166",
pages = "374--378",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiC

AU - Jiang, W.

AU - Weber, W. J.

AU - Thevuthasan, S.

AU - Grötzschel, R.

PY - 2000/5/2

Y1 - 2000/5/2

N2 - RBS/channeling (RBS/C) has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H2+ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At fluences below 1.5×1016 H+ cm-2, isochronal recovery occurs gradually over a wide temperature range. Above a fluence of 1.5×1017 H+ cm-2, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences between 4.5×1016 and 1.0×1017 H+ cm-2, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for silicon carbide (SiC) irradiated at 100 K and subsequently annealed at 1070 K for 20 min.

AB - RBS/channeling (RBS/C) has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H2+ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At fluences below 1.5×1016 H+ cm-2, isochronal recovery occurs gradually over a wide temperature range. Above a fluence of 1.5×1017 H+ cm-2, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences between 4.5×1016 and 1.0×1017 H+ cm-2, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for silicon carbide (SiC) irradiated at 100 K and subsequently annealed at 1070 K for 20 min.

UR - http://www.scopus.com/inward/record.url?scp=0033738182&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033738182&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)01050-2

DO - 10.1016/S0168-583X(99)01050-2

M3 - Article

AN - SCOPUS:0033738182

VL - 166

SP - 374

EP - 378

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -