Irradiation effects and thermal annealing behavior in H2+-implanted 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, R. Grötzschel

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    RBS/channeling (RBS/C) has been used to study the accumulation and isochronal recovery of disorder on the Si sublattice in 6H-SiC single crystals irradiated with 100 keV H2+ ions at 100 and 300 K. The disorder at the damage peak shows a sigmoidal dependence on ion fluence for both irradiation temperatures. Dramatic simultaneous recovery is observed for the irradiation at 300 K. At fluences below 1.5×1016 H+ cm-2, isochronal recovery occurs gradually over a wide temperature range. Above a fluence of 1.5×1017 H+ cm-2, a near amorphous state is produced, and significant recovery does not occur. At intermediate fluences between 4.5×1016 and 1.0×1017 H+ cm-2, damage recovery occurs more rapidly between 300 and 670 K. Further annealing at 1070 K results in the formation of blisters. Hydrogen depth profiles at 100 and 300 K are comparable and are well predicted by SRIM-97 simulations. Hydrogen release of about 30% is observed for silicon carbide (SiC) irradiated at 100 K and subsequently annealed at 1070 K for 20 min.

    Original languageEnglish
    Pages (from-to)374-378
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Publication statusPublished - 2 May 2000
    Event10th International Conference on Radiation Effects in Insulators - Jena, Ger
    Duration: 18 Jul 199923 Jul 1999


    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

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