Ion implantation and thermal annealing in silicon carbide and gallium nitride

W. Jiang, W. J. Weber, S. Thevuthasan

    Research output: Contribution to journalConference article

    5 Citations (Scopus)

    Abstract

    Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2+-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.

    Original languageEnglish
    Pages (from-to)204-208
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume178
    Issue number1-4
    DOIs
    Publication statusPublished - 1 May 2001
    EventMaterials Science with Ion Beams - Strasbourg, France
    Duration: 30 May 20002 Jun 2000

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    Keywords

    • 6H-SiC
    • GaN
    • Ion channeling
    • Ion implantation
    • Thermal recovery

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

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