Ion implantation and thermal annealing in silicon carbide and gallium nitride

W. Jiang, W. J. Weber, S. Thevuthasan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2+-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.

Original languageEnglish
Pages (from-to)204-208
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume178
Issue number1-4
DOIs
Publication statusPublished - May 2001
Externally publishedYes

Fingerprint

Gallium nitride
gallium nitrides
Silicon carbide
Ion implantation
silicon carbides
nitrides
ion implantation
Annealing
annealing
Amorphization
Defects
implantation
defects
recovery
Single crystals
Recovery
single crystals
Ion beams
sublattices
surface layers

Keywords

  • 6H-SiC
  • GaN
  • Ion channeling
  • Ion implantation
  • Thermal recovery

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion implantation and thermal annealing in silicon carbide and gallium nitride. / Jiang, W.; Weber, W. J.; Thevuthasan, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 178, No. 1-4, 05.2001, p. 204-208.

Research output: Contribution to journalArticle

@article{487294fd617c4c3eb4a3aa2711227d37,
title = "Ion implantation and thermal annealing in silicon carbide and gallium nitride",
abstract = "Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2+-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.",
keywords = "6H-SiC, GaN, Ion channeling, Ion implantation, Thermal recovery",
author = "W. Jiang and Weber, {W. J.} and S. Thevuthasan",
year = "2001",
month = "5",
doi = "10.1016/S0168-583X(00)00451-1",
language = "English",
volume = "178",
pages = "204--208",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Ion implantation and thermal annealing in silicon carbide and gallium nitride

AU - Jiang, W.

AU - Weber, W. J.

AU - Thevuthasan, S.

PY - 2001/5

Y1 - 2001/5

N2 - Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2+-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.

AB - Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of gallium nitride (GaN) has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in silicon carbide (SiC) at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2+-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.

KW - 6H-SiC

KW - GaN

KW - Ion channeling

KW - Ion implantation

KW - Thermal recovery

UR - http://www.scopus.com/inward/record.url?scp=0035336876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035336876&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(00)00451-1

DO - 10.1016/S0168-583X(00)00451-1

M3 - Article

VL - 178

SP - 204

EP - 208

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -