Ion-channeling study of the SiC/Si/SiO2/Si interface

W. Jiang, S. Thevuthasan, W. J. Weber, F. Namavar

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ion channeling has been used in a detailed study of 3C-SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick (100)-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC-Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC-Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations.

Original languageEnglish
Pages (from-to)3501-3503
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number23
Publication statusPublished - 7 Jun 1999
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jiang, W., Thevuthasan, S., Weber, W. J., & Namavar, F. (1999). Ion-channeling study of the SiC/Si/SiO2/Si interface. Applied Physics Letters, 74(23), 3501-3503.