Ion channeling has been used in a detailed study of 3C-SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick (100)-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC-Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC-Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 7 Jun 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)