Ion beam slicing of single crystal oxide thin films

S. Thevuthasan, V. Shutthanandan, W. Jiang, W. J. Weber

    Research output: Contribution to journalConference article

    Abstract

    Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0×1016 H+/cm2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.

    Original languageEnglish
    Pages (from-to)O6.2.1-O6.2.6
    JournalMaterials Research Society Symposium - Proceedings
    Volume647
    Publication statusPublished - 1 Jan 2001
    EventIon Beam Synthesis and Processing of Advanced Materials - Boston, MA, United States
    Duration: 27 Nov 200029 Nov 2000

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    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Thevuthasan, S., Shutthanandan, V., Jiang, W., & Weber, W. J. (2001). Ion beam slicing of single crystal oxide thin films. Materials Research Society Symposium - Proceedings, 647, O6.2.1-O6.2.6.