Ion beam slicing of single crystal oxide thin films

S. Thevuthasan, V. Shutthanandan, W. Jiang, W. J. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO 3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0×10 16 H +/cm 2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.C. Moss, K. Heinig, D.B. Poker
Volume647
Publication statusPublished - 2001
Externally publishedYes
EventIon Beam Synthesis and Processing of Advanced Materials - Boston, MA, United States
Duration: 27 Nov 200029 Nov 2000

Other

OtherIon Beam Synthesis and Processing of Advanced Materials
CountryUnited States
CityBoston, MA
Period27/11/0029/11/00

Fingerprint

Ion beams
Oxide films
Hydrogen
Single crystals
Annealing
Ions
Thin films
Epitaxial films
Rutherford backscattering spectroscopy
Silicon
Spectrometry
Protons
Adhesives
Temperature
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thevuthasan, S., Shutthanandan, V., Jiang, W., & Weber, W. J. (2001). Ion beam slicing of single crystal oxide thin films. In S. C. Moss, K. Heinig, & D. B. Poker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 647)

Ion beam slicing of single crystal oxide thin films. / Thevuthasan, S.; Shutthanandan, V.; Jiang, W.; Weber, W. J.

Materials Research Society Symposium - Proceedings. ed. / S.C. Moss; K. Heinig; D.B. Poker. Vol. 647 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thevuthasan, S, Shutthanandan, V, Jiang, W & Weber, WJ 2001, Ion beam slicing of single crystal oxide thin films. in SC Moss, K Heinig & DB Poker (eds), Materials Research Society Symposium - Proceedings. vol. 647, Ion Beam Synthesis and Processing of Advanced Materials, Boston, MA, United States, 27/11/00.
Thevuthasan S, Shutthanandan V, Jiang W, Weber WJ. Ion beam slicing of single crystal oxide thin films. In Moss SC, Heinig K, Poker DB, editors, Materials Research Society Symposium - Proceedings. Vol. 647. 2001
Thevuthasan, S. ; Shutthanandan, V. ; Jiang, W. ; Weber, W. J. / Ion beam slicing of single crystal oxide thin films. Materials Research Society Symposium - Proceedings. editor / S.C. Moss ; K. Heinig ; D.B. Poker. Vol. 647 2001.
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