Ion beam analysis of irradiation effects in 6H-SiC

W. Jiang, W. J. Weber, Y. Zhang, S. Thevuthasan, V. Shutthanandan

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Irradiation in 6H-SiC single crystal wafers has been performed at temperatures ranging from 150 to 550 K using 2.0 MeV Au2+ or at 300 K using 50 keV He+ ions. Additional irradiation for the He+-irradiated specimen was carried out near room temperature using 50 MeV I10+ ions to ∼0.1 ions/nm2. In situ isothermal annealing for 6H-SiC irradiated at 500 K to 2.0 Au2+/nm2 was also conducted up to 90 min at the irradiation temperature. The lattice disorder in the irradiated samples has been determined using either 2.0 MeV He+ or 0.94 MeV D+ channeling analysis along the 〈0 0 0 1〉 axis. Results show that there is a substantial diffusion of the Si defects into a greater depth during the Au2+ irradiation at 500 and 550 K. Complete amorphization at 550 K does not occur up to a maximum fluence of 15 Au2+/nm2 in this study. Significant thermal recovery of the Si defects produced at 150 K was not observed during the subsequent thermal annealing at 500 K. Following the I10+ irradiation in the He+-irradiated specimen near room temperature, remarkable recrystallization at the amorphous-crystalline interfaces around the damage profile is observed.

Original languageEnglish
Pages (from-to)92-99
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume207
Issue number1
DOIs
Publication statusPublished - May 2003
Externally publishedYes

Fingerprint

Ion beams
ion beams
Irradiation
irradiation
Ions
Isothermal annealing
Temperature
Defects
ions
annealing
Amorphization
defects
room temperature
fluence
Crystallization
recovery
Single crystals
wafers
disorders
Annealing

Keywords

  • Disorder accumulation and recovery
  • Ion channeling analysis
  • Ion irradiation
  • SiC

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion beam analysis of irradiation effects in 6H-SiC. / Jiang, W.; Weber, W. J.; Zhang, Y.; Thevuthasan, S.; Shutthanandan, V.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 207, No. 1, 05.2003, p. 92-99.

Research output: Contribution to journalArticle

Jiang, W. ; Weber, W. J. ; Zhang, Y. ; Thevuthasan, S. ; Shutthanandan, V. / Ion beam analysis of irradiation effects in 6H-SiC. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2003 ; Vol. 207, No. 1. pp. 92-99.
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