Iodine-and bromine-based dry etching of LaCaMnO3

J. J. Wang, H. Cho, J. R. Childress, S. J. Pearton, F. Sharifi, K. H. Dahmen, E. S. Gillman

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Abstract

Two novel plasma chemistries, BI3 and BBr3, have been employed for dry etching of LaCaMnO3 thin films. For both mixtures there is some chemical enhancement of etch rates at low halide compositions in the discharge, and the rates are a strong function of ion/neutral ratio. Maximum rates are obtained at ratios near 0.02. Etch yields are typically low (<0.3) under inductively-coupled plasma (CICP) conditions. Smoothd surface morphologies are obtained over a wide range of conditions, with high-fidelity pattern transfer using SiO2 or SiNx masks.

Original languageEnglish
Pages (from-to)229-239
Number of pages11
JournalPlasma Chemistry and Plasma Processing
Volume19
Issue number2
Publication statusPublished - 1 Dec 1999
Externally publishedYes

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Keywords

  • Iodine-and bromine-based dry etching
  • Plasma etching

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Wang, J. J., Cho, H., Childress, J. R., Pearton, S. J., Sharifi, F., Dahmen, K. H., & Gillman, E. S. (1999). Iodine-and bromine-based dry etching of LaCaMnO3 Plasma Chemistry and Plasma Processing, 19(2), 229-239.