Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells

Guy Brammertz, Souhaib Oueslati, Marie Buffiere, Jonas Bekaert, Hossam El Anzeery, Khaled Ben Messaoud, Sylvester Sahayaraj, Thomas Nuytten, Christine Köble, Marc Meuris, Jozef Poortmans

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have investigated different nonidealities in Cu2ZnSnSe4-CdS-ZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorber-buffer heterojunction leading to a strong crossover behavior between dark and illuminated current-voltage curves. In addition, a barrier of about 130 meV is present at the Mo-absorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.

Original languageEnglish
Article number6994260
Pages (from-to)649-655
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume5
Issue number2
DOIs
Publication statusPublished - 1 Mar 2015

Fingerprint

Solar cells
solar cells
Special effects
Defects
Carrier lifetime
Conversion efficiency
Heterojunctions
Buffers
Diodes
Activation energy
Spectroscopy
absorbers
Electrons
Electric potential
defects
carrier lifetime
electrical impedance
minority carriers
dark current
heterojunctions

Keywords

  • Admittance spectroscopy
  • CuZnSnSe (CZTSe)
  • defect
  • kesterite
  • solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Brammertz, G., Oueslati, S., Buffiere, M., Bekaert, J., El Anzeery, H., Messaoud, K. B., ... Poortmans, J. (2015). Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells. IEEE Journal of Photovoltaics, 5(2), 649-655. [6994260]. https://doi.org/10.1109/JPHOTOV.2014.2376053

Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells. / Brammertz, Guy; Oueslati, Souhaib; Buffiere, Marie; Bekaert, Jonas; El Anzeery, Hossam; Messaoud, Khaled Ben; Sahayaraj, Sylvester; Nuytten, Thomas; Köble, Christine; Meuris, Marc; Poortmans, Jozef.

In: IEEE Journal of Photovoltaics, Vol. 5, No. 2, 6994260, 01.03.2015, p. 649-655.

Research output: Contribution to journalArticle

Brammertz, G, Oueslati, S, Buffiere, M, Bekaert, J, El Anzeery, H, Messaoud, KB, Sahayaraj, S, Nuytten, T, Köble, C, Meuris, M & Poortmans, J 2015, 'Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells', IEEE Journal of Photovoltaics, vol. 5, no. 2, 6994260, pp. 649-655. https://doi.org/10.1109/JPHOTOV.2014.2376053
Brammertz, Guy ; Oueslati, Souhaib ; Buffiere, Marie ; Bekaert, Jonas ; El Anzeery, Hossam ; Messaoud, Khaled Ben ; Sahayaraj, Sylvester ; Nuytten, Thomas ; Köble, Christine ; Meuris, Marc ; Poortmans, Jozef. / Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells. In: IEEE Journal of Photovoltaics. 2015 ; Vol. 5, No. 2. pp. 649-655.
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