Investigation of copper(I) oxide quantum dots by near-edge X-ray absorption fine structure spectroscopy

Ponnusamy Nachimuthu, Suntharampillai Thevuthasan, Yong J. Kim, Alan S. Lea, Vaithiyalingam Shutthanandan, Mark H. Engelhard, Donald R. Baer, Scott A. Chambers, David K. Shuh, Dennis W. Lindle, Eric M. Gullikson, Rupert C C Perera

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Copper(I) oxide quantum dots (OQDs) were grown in various thicknesses on different SrTiO3(001) surfaces and were investigated by near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The experimental growth conditions for the OQDs were optimized to obtain Cu2O as the major phase. The OQDs grown on clean SrTiO3(001) surfaces at 825 K and higher with p(O2) of 9.0 × 10-7 Torr or greater contain mostly CuO, contrasting to OQDs grown at 800 K with p(O2) of ∼7.0 × 10-7 Torr that contain primarily Cu2O. Furthermore, there is a strong interaction between the SrTiO3(001) surface and the first few monolayers of the OQDs, which induces the formation of Cu(II). However, this interaction is mitigated with increasing thickness of OQDs, resulting in the exclusive formation of Cu2O in the topmost layers. The influence of the SrTiO3(001) substrate on the formation of OQDs can be minimized by modifying the substrate surface using chemical treatment and/or energetic Au2+ ion-beam irradiation. Examination of the photochemical properties of these OQDs shows that prolonged soft X-ray irradiation under vacuum reduces Cu(II), which is present as a minor impurity in the Cu(I) OQDs.

Original languageEnglish
Pages (from-to)3939-3946
Number of pages8
JournalChemistry of Materials
Volume15
Issue number20
DOIs
Publication statusPublished - 7 Oct 2003
Externally publishedYes

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X ray absorption near edge structure spectroscopy
Copper oxides
Semiconductor quantum dots
Oxides
Irradiation
Substrates
Ion beams
Monolayers
Vacuum
Impurities
X rays

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

Cite this

Nachimuthu, P., Thevuthasan, S., Kim, Y. J., Lea, A. S., Shutthanandan, V., Engelhard, M. H., ... Perera, R. C. C. (2003). Investigation of copper(I) oxide quantum dots by near-edge X-ray absorption fine structure spectroscopy. Chemistry of Materials, 15(20), 3939-3946. https://doi.org/10.1021/cm021757n

Investigation of copper(I) oxide quantum dots by near-edge X-ray absorption fine structure spectroscopy. / Nachimuthu, Ponnusamy; Thevuthasan, Suntharampillai; Kim, Yong J.; Lea, Alan S.; Shutthanandan, Vaithiyalingam; Engelhard, Mark H.; Baer, Donald R.; Chambers, Scott A.; Shuh, David K.; Lindle, Dennis W.; Gullikson, Eric M.; Perera, Rupert C C.

In: Chemistry of Materials, Vol. 15, No. 20, 07.10.2003, p. 3939-3946.

Research output: Contribution to journalArticle

Nachimuthu, P, Thevuthasan, S, Kim, YJ, Lea, AS, Shutthanandan, V, Engelhard, MH, Baer, DR, Chambers, SA, Shuh, DK, Lindle, DW, Gullikson, EM & Perera, RCC 2003, 'Investigation of copper(I) oxide quantum dots by near-edge X-ray absorption fine structure spectroscopy', Chemistry of Materials, vol. 15, no. 20, pp. 3939-3946. https://doi.org/10.1021/cm021757n
Nachimuthu P, Thevuthasan S, Kim YJ, Lea AS, Shutthanandan V, Engelhard MH et al. Investigation of copper(I) oxide quantum dots by near-edge X-ray absorption fine structure spectroscopy. Chemistry of Materials. 2003 Oct 7;15(20):3939-3946. https://doi.org/10.1021/cm021757n
Nachimuthu, Ponnusamy ; Thevuthasan, Suntharampillai ; Kim, Yong J. ; Lea, Alan S. ; Shutthanandan, Vaithiyalingam ; Engelhard, Mark H. ; Baer, Donald R. ; Chambers, Scott A. ; Shuh, David K. ; Lindle, Dennis W. ; Gullikson, Eric M. ; Perera, Rupert C C. / Investigation of copper(I) oxide quantum dots by near-edge X-ray absorption fine structure spectroscopy. In: Chemistry of Materials. 2003 ; Vol. 15, No. 20. pp. 3939-3946.
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