Interpretation of beneficial annealing of CIGSe cell buffured with co-evaporated In 2S 3

C. Laurencic, Marie Buffiere, L. Arzel, N. Barreau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The present contribution aims at better understanding the origin of the beneficial effect of the annealing of CIGSe-based solar cell buffered with co-evaporated (PVD)In 2S 3. For long, most of the works dealing with such alternatives to chemical bath deposited (CBD)CdS buffer layer have been focused on the CIGSe/buffer interface, where the pn junction is formed. Herein, we show that as already suggested by Nguyen et al. [1] in the case of (CBD)In 2S 3 buffer, the annealing post-treatment most probably improves the Voc and FF of the devices because it changes the nature and/or the density of defects at the In 2S 3/r-ZnO interface. Such a conclusion is motivated by our observation that rinsing the CIGSe/(PVD)In 2S 3 structures with water before the window deposition induces the same effect as the annealing, then such treated samples are less improved by annealing. In addition, the X-ray photoelectron spectroscopy analyses performed on the CIGSe/(PVD)In 2S 3 structure before and after the water treatment show that Na carbonates are removed from the surface by the water. This latter observation suggests that the main impact of the annealing of the cells buffered with co-evaporated In 2S 3 would be the destruction or the out migration of the Na-based compounds at the buffer/r-ZnO interface.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2746-2748
Number of pages3
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19/6/1124/6/11

Fingerprint

Annealing
Physical vapor deposition
Buffer layers
Water treatment
Water
Carbonates
Solar cells
X ray photoelectron spectroscopy
Defects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Laurencic, C., Buffiere, M., Arzel, L., & Barreau, N. (2011). Interpretation of beneficial annealing of CIGSe cell buffured with co-evaporated In 2S 3 In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2746-2748). [6186515] https://doi.org/10.1109/PVSC.2011.6186515

Interpretation of beneficial annealing of CIGSe cell buffured with co-evaporated In 2S 3 . / Laurencic, C.; Buffiere, Marie; Arzel, L.; Barreau, N.

Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2746-2748 6186515.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laurencic, C, Buffiere, M, Arzel, L & Barreau, N 2011, Interpretation of beneficial annealing of CIGSe cell buffured with co-evaporated In 2S 3 in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186515, pp. 2746-2748, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/6/11. https://doi.org/10.1109/PVSC.2011.6186515
Laurencic C, Buffiere M, Arzel L, Barreau N. Interpretation of beneficial annealing of CIGSe cell buffured with co-evaporated In 2S 3 In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2746-2748. 6186515 https://doi.org/10.1109/PVSC.2011.6186515
Laurencic, C. ; Buffiere, Marie ; Arzel, L. ; Barreau, N. / Interpretation of beneficial annealing of CIGSe cell buffured with co-evaporated In 2S 3 Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. pp. 2746-2748
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