Interface structure of an epitaxial cubic ceria film on cubic zirconia

Chong Min Wang, Suntharampillai Thevuthasan, C. H F Peden

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A cubic CeO2 (001) film with a thickness of ∼58 nm was grown epitaxially on Y2O3-stablized cubic ZrO2 by oxygen-plasmaassisted molecular-beam epitaxy (OPA-MBE). The interface was characterized using high-resolution transmission electron microscopy (HRTEM). The interface exhibited coherent regions separated by equally spaced misfit dislocations. When imaged from the [100] direction, the dislocation spacing is 3.3 ± 0.5 nm, which is slightly shorter than the expected value of 4.9 nm calculated from the differences in lattice constants given in the literature, but is fairly consistent with that of 3.9 nm which was calculated using the lattice mismatch measured by electron diffraction. Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalJournal of the American Ceramic Society
Volume86
Issue number2
Publication statusPublished - Feb 2003
Externally publishedYes

Fingerprint

Lattice mismatch
Cerium compounds
Dislocations (crystals)
dislocation
Zirconia
High resolution transmission electron microscopy
Molecular beam epitaxy
Electron diffraction
Lattice constants
diffraction
Oxygen
transmission electron microscopy
spacing
Substrates
substrate
electron
oxygen
zirconium oxide
Direction compound

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Wang, C. M., Thevuthasan, S., & Peden, C. H. F. (2003). Interface structure of an epitaxial cubic ceria film on cubic zirconia. Journal of the American Ceramic Society, 86(2), 363-365.

Interface structure of an epitaxial cubic ceria film on cubic zirconia. / Wang, Chong Min; Thevuthasan, Suntharampillai; Peden, C. H F.

In: Journal of the American Ceramic Society, Vol. 86, No. 2, 02.2003, p. 363-365.

Research output: Contribution to journalArticle

Wang, CM, Thevuthasan, S & Peden, CHF 2003, 'Interface structure of an epitaxial cubic ceria film on cubic zirconia', Journal of the American Ceramic Society, vol. 86, no. 2, pp. 363-365.
Wang, Chong Min ; Thevuthasan, Suntharampillai ; Peden, C. H F. / Interface structure of an epitaxial cubic ceria film on cubic zirconia. In: Journal of the American Ceramic Society. 2003 ; Vol. 86, No. 2. pp. 363-365.
@article{edc0f89ddb684dc0877796b26b5f095b,
title = "Interface structure of an epitaxial cubic ceria film on cubic zirconia",
abstract = "A cubic CeO2 (001) film with a thickness of ∼58 nm was grown epitaxially on Y2O3-stablized cubic ZrO2 by oxygen-plasmaassisted molecular-beam epitaxy (OPA-MBE). The interface was characterized using high-resolution transmission electron microscopy (HRTEM). The interface exhibited coherent regions separated by equally spaced misfit dislocations. When imaged from the [100] direction, the dislocation spacing is 3.3 ± 0.5 nm, which is slightly shorter than the expected value of 4.9 nm calculated from the differences in lattice constants given in the literature, but is fairly consistent with that of 3.9 nm which was calculated using the lattice mismatch measured by electron diffraction. Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.",
author = "Wang, {Chong Min} and Suntharampillai Thevuthasan and Peden, {C. H F}",
year = "2003",
month = "2",
language = "English",
volume = "86",
pages = "363--365",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "2",

}

TY - JOUR

T1 - Interface structure of an epitaxial cubic ceria film on cubic zirconia

AU - Wang, Chong Min

AU - Thevuthasan, Suntharampillai

AU - Peden, C. H F

PY - 2003/2

Y1 - 2003/2

N2 - A cubic CeO2 (001) film with a thickness of ∼58 nm was grown epitaxially on Y2O3-stablized cubic ZrO2 by oxygen-plasmaassisted molecular-beam epitaxy (OPA-MBE). The interface was characterized using high-resolution transmission electron microscopy (HRTEM). The interface exhibited coherent regions separated by equally spaced misfit dislocations. When imaged from the [100] direction, the dislocation spacing is 3.3 ± 0.5 nm, which is slightly shorter than the expected value of 4.9 nm calculated from the differences in lattice constants given in the literature, but is fairly consistent with that of 3.9 nm which was calculated using the lattice mismatch measured by electron diffraction. Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.

AB - A cubic CeO2 (001) film with a thickness of ∼58 nm was grown epitaxially on Y2O3-stablized cubic ZrO2 by oxygen-plasmaassisted molecular-beam epitaxy (OPA-MBE). The interface was characterized using high-resolution transmission electron microscopy (HRTEM). The interface exhibited coherent regions separated by equally spaced misfit dislocations. When imaged from the [100] direction, the dislocation spacing is 3.3 ± 0.5 nm, which is slightly shorter than the expected value of 4.9 nm calculated from the differences in lattice constants given in the literature, but is fairly consistent with that of 3.9 nm which was calculated using the lattice mismatch measured by electron diffraction. Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.

UR - http://www.scopus.com/inward/record.url?scp=0037299419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037299419&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037299419

VL - 86

SP - 363

EP - 365

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 2

ER -