Interface structure of an epitaxial cubic ceria film on cubic zirconia

Chong Min Wang, Suntharampillai Thevuthasan, C. H F Peden

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Abstract

A cubic CeO2 (001) film with a thickness of ∼58 nm was grown epitaxially on Y2O3-stablized cubic ZrO2 by oxygen-plasmaassisted molecular-beam epitaxy (OPA-MBE). The interface was characterized using high-resolution transmission electron microscopy (HRTEM). The interface exhibited coherent regions separated by equally spaced misfit dislocations. When imaged from the [100] direction, the dislocation spacing is 3.3 ± 0.5 nm, which is slightly shorter than the expected value of 4.9 nm calculated from the differences in lattice constants given in the literature, but is fairly consistent with that of 3.9 nm which was calculated using the lattice mismatch measured by electron diffraction. Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalJournal of the American Ceramic Society
Volume86
Issue number2
Publication statusPublished - Feb 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Wang, C. M., Thevuthasan, S., & Peden, C. H. F. (2003). Interface structure of an epitaxial cubic ceria film on cubic zirconia. Journal of the American Ceramic Society, 86(2), 363-365.