Interface characteristics of iso-structural thin film and substrate pairs

C. M. Wang, S. Thevuthasan, F. Gao, V. Shutthanandan, D. E. McCready, S. A. Chambers, C. H.F. Peden

    Research output: Contribution to journalConference article

    3 Citations (Scopus)


    Cubic-CeO2 and α-Fe2O3 thin films have been epitaxially grown on yttria-stabilized ZrO2 and α-Al2O3 substrates, respectively, by oxygen plasma assisted molecular beam epitaxy. The interface structural features between the films and the substrates were characterized by Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). RBS channeling spectra for both CeO2/ZrO2 and Fe2O3/Al2O3 show interface disorder-related scattering peaks. It is believed that the observed interface disorder-related scattering peaks in the RBS spectra are due to interface misfit dislocations. Cross sectional HRTEM reveals that interfaces of both systems are similarly characterized by coherent regions that are separated by misfit dislocations periodically distributed along the interface. The experimentally observed dislocation spacings are approximately consistent with those calculated from the lattice mismatch, implying that the lattice mismatch is accommodated mainly by interface misfit dislocations.

    Original languageEnglish
    Pages (from-to)1-9
    Number of pages9
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Issue number1
    Publication statusPublished - 1 May 2003
    EventSymposium: Ion beam processing and modification of glasses and - St.Louis, Missouri, United States
    Duration: 28 Apr 20021 May 2002



    • Interface dislocations
    • RBS
    • TEM
    • Thin film
    • c-CeO
    • α-FeO

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

    Cite this