Interband transitions and electronic Raman continuum in systems with strong inelastic scattering

Applications to YBa2Cu3O7-δ

Sergey Rashkeev, G. Wendin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We consider a model for the electronic Raman continuum which takes into account strong inelastic scattering and interband transitions. Calculations are based on four-vertex Raman scattering diagrams (Kawabata formalism) within the RPA for Coulomb interaction and the ladder diagram Bethe-Salpeter equation for the vertex. We apply this method to an analysis of the nature of the electronic Raman continuum in the normal state of the high-Tc superconductor YBa2Cu3O7. In numerical calculations we take into account all the self-energy effects and make simulations for vertex corrections assuming that inelastic scattering is due to electron-phonon interaction. The ab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and inelastic scattering strength. The in-plane anisotropy is determined by interband transitions rather than by anisotropy of the Fermi surface. The ZZ continuum contains only weak contribution from interband transitions. It can be crudely described within a single band model with inelastic scattering and is strongly dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.

Original languageEnglish
Pages (from-to)33-43
Number of pages11
JournalZeitschrift für Physik B Condensed Matter
Volume93
Issue number1
DOIs
Publication statusPublished - 1 Mar 1993
Externally publishedYes

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Inelastic scattering
inelastic scattering
continuums
electronics
apexes
Raman scattering
Anisotropy
diagrams
Raman spectra
Electron-phonon interactions
anisotropy
Bethe-Salpeter equation
Fermi surface
hypoxia
Ladders
Electron transitions
electron phonon interactions
Coulomb interactions
ladders
Superconducting materials

Keywords

  • 74.72.Bk
  • 78.30.Er

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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AU - Wendin, G.

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N2 - We consider a model for the electronic Raman continuum which takes into account strong inelastic scattering and interband transitions. Calculations are based on four-vertex Raman scattering diagrams (Kawabata formalism) within the RPA for Coulomb interaction and the ladder diagram Bethe-Salpeter equation for the vertex. We apply this method to an analysis of the nature of the electronic Raman continuum in the normal state of the high-Tc superconductor YBa2Cu3O7. In numerical calculations we take into account all the self-energy effects and make simulations for vertex corrections assuming that inelastic scattering is due to electron-phonon interaction. The ab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and inelastic scattering strength. The in-plane anisotropy is determined by interband transitions rather than by anisotropy of the Fermi surface. The ZZ continuum contains only weak contribution from interband transitions. It can be crudely described within a single band model with inelastic scattering and is strongly dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.

AB - We consider a model for the electronic Raman continuum which takes into account strong inelastic scattering and interband transitions. Calculations are based on four-vertex Raman scattering diagrams (Kawabata formalism) within the RPA for Coulomb interaction and the ladder diagram Bethe-Salpeter equation for the vertex. We apply this method to an analysis of the nature of the electronic Raman continuum in the normal state of the high-Tc superconductor YBa2Cu3O7. In numerical calculations we take into account all the self-energy effects and make simulations for vertex corrections assuming that inelastic scattering is due to electron-phonon interaction. The ab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and inelastic scattering strength. The in-plane anisotropy is determined by interband transitions rather than by anisotropy of the Fermi surface. The ZZ continuum contains only weak contribution from interband transitions. It can be crudely described within a single band model with inelastic scattering and is strongly dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.

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