Injection level and temperature dependence of the recombination activity of grain boundaries in germanium

Nouar Tabet, C. J A Monty

Research output: Contribution to journalArticle

Abstract

The recombination activity of grain boundaries (GBs) in Ge polycrystals was investigated by means of the Electron Beam Induced Current (EBIC) technique. Dark EBIC contrast was observed at GBs in both highly and slightly doped materials. The temperature and the primary beam current effects on the maximum contrast was analysed using the Shockley-Read-Hall theory. The results show that a shallow level, which lies at 0.1 eV above the valence band, controls the carrier recombination at grain boundaries.

Original languageEnglish
Pages (from-to)821-824
Number of pages4
JournalMaterials Science Forum
Volume207-209
Issue numberPART 2
Publication statusPublished - 1 Dec 1996
Externally publishedYes

Fingerprint

Germanium
germanium
Grain boundaries
grain boundaries
Induced currents
injection
temperature dependence
Electron beams
electron beams
Polycrystals
polycrystals
Valence bands
beam currents
Temperature
valence
temperature

Keywords

  • EBIC
  • Electrical Properties
  • Electronic Carriers
  • Germanium
  • Grain Boundary
  • Recombination

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Injection level and temperature dependence of the recombination activity of grain boundaries in germanium. / Tabet, Nouar; Monty, C. J A.

In: Materials Science Forum, Vol. 207-209, No. PART 2, 01.12.1996, p. 821-824.

Research output: Contribution to journalArticle

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