Initial stages of oxide nanodot heteroepitaxial growth

Cu 2O on SrTiO 3(100)

I. Lyubinetsky, A. El-Azab, A. S. Lea, S. Thevuthasan, D. R. Baer

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The growth mechanism in a heteroepitaxy of oxide nanodots is investigated by a combination of x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and theoretical modeling. In contrast to the majority of semiconductor systems, in the studied metal oxide system of Cu 2O-SrTiO 3(100) the growth process starts without wetting layer formation with the appearance of small (∼10 nm) square-based planar Cu 2O nanodots. Continued deposition leads mainly to increase of the nanodot density, practically, without change of their size. Only after reaching some critical density (∼ 10 13 cm -2 for 760 K growth temperature), growth of scattered, significantly larger islands starts through the coalescence of small nanodots. XPS analysis suggests that the interface between small nanodots and substrate is abrupt with only weak Cu-O(SrTiO 3) interaction.

Original languageEnglish
Pages (from-to)4481-4483
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
Publication statusPublished - 8 Nov 2004
Externally publishedYes

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oxides
x ray spectroscopy
photoelectron spectroscopy
coalescing
wetting
metal oxides
atomic force microscopy
interactions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lyubinetsky, I., El-Azab, A., Lea, A. S., Thevuthasan, S., & Baer, D. R. (2004). Initial stages of oxide nanodot heteroepitaxial growth: Cu 2O on SrTiO 3(100). Applied Physics Letters, 85(19), 4481-4483. https://doi.org/10.1063/1.1819509

Initial stages of oxide nanodot heteroepitaxial growth : Cu 2O on SrTiO 3(100). / Lyubinetsky, I.; El-Azab, A.; Lea, A. S.; Thevuthasan, S.; Baer, D. R.

In: Applied Physics Letters, Vol. 85, No. 19, 08.11.2004, p. 4481-4483.

Research output: Contribution to journalArticle

Lyubinetsky, I, El-Azab, A, Lea, AS, Thevuthasan, S & Baer, DR 2004, 'Initial stages of oxide nanodot heteroepitaxial growth: Cu 2O on SrTiO 3(100)', Applied Physics Letters, vol. 85, no. 19, pp. 4481-4483. https://doi.org/10.1063/1.1819509
Lyubinetsky I, El-Azab A, Lea AS, Thevuthasan S, Baer DR. Initial stages of oxide nanodot heteroepitaxial growth: Cu 2O on SrTiO 3(100). Applied Physics Letters. 2004 Nov 8;85(19):4481-4483. https://doi.org/10.1063/1.1819509
Lyubinetsky, I. ; El-Azab, A. ; Lea, A. S. ; Thevuthasan, S. ; Baer, D. R. / Initial stages of oxide nanodot heteroepitaxial growth : Cu 2O on SrTiO 3(100). In: Applied Physics Letters. 2004 ; Vol. 85, No. 19. pp. 4481-4483.
@article{487d5042024544aba2f3b468d802decd,
title = "Initial stages of oxide nanodot heteroepitaxial growth: Cu 2O on SrTiO 3(100)",
abstract = "The growth mechanism in a heteroepitaxy of oxide nanodots is investigated by a combination of x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and theoretical modeling. In contrast to the majority of semiconductor systems, in the studied metal oxide system of Cu 2O-SrTiO 3(100) the growth process starts without wetting layer formation with the appearance of small (∼10 nm) square-based planar Cu 2O nanodots. Continued deposition leads mainly to increase of the nanodot density, practically, without change of their size. Only after reaching some critical density (∼ 10 13 cm -2 for 760 K growth temperature), growth of scattered, significantly larger islands starts through the coalescence of small nanodots. XPS analysis suggests that the interface between small nanodots and substrate is abrupt with only weak Cu-O(SrTiO 3) interaction.",
author = "I. Lyubinetsky and A. El-Azab and Lea, {A. S.} and S. Thevuthasan and Baer, {D. R.}",
year = "2004",
month = "11",
day = "8",
doi = "10.1063/1.1819509",
language = "English",
volume = "85",
pages = "4481--4483",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Initial stages of oxide nanodot heteroepitaxial growth

T2 - Cu 2O on SrTiO 3(100)

AU - Lyubinetsky, I.

AU - El-Azab, A.

AU - Lea, A. S.

AU - Thevuthasan, S.

AU - Baer, D. R.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - The growth mechanism in a heteroepitaxy of oxide nanodots is investigated by a combination of x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and theoretical modeling. In contrast to the majority of semiconductor systems, in the studied metal oxide system of Cu 2O-SrTiO 3(100) the growth process starts without wetting layer formation with the appearance of small (∼10 nm) square-based planar Cu 2O nanodots. Continued deposition leads mainly to increase of the nanodot density, practically, without change of their size. Only after reaching some critical density (∼ 10 13 cm -2 for 760 K growth temperature), growth of scattered, significantly larger islands starts through the coalescence of small nanodots. XPS analysis suggests that the interface between small nanodots and substrate is abrupt with only weak Cu-O(SrTiO 3) interaction.

AB - The growth mechanism in a heteroepitaxy of oxide nanodots is investigated by a combination of x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and theoretical modeling. In contrast to the majority of semiconductor systems, in the studied metal oxide system of Cu 2O-SrTiO 3(100) the growth process starts without wetting layer formation with the appearance of small (∼10 nm) square-based planar Cu 2O nanodots. Continued deposition leads mainly to increase of the nanodot density, practically, without change of their size. Only after reaching some critical density (∼ 10 13 cm -2 for 760 K growth temperature), growth of scattered, significantly larger islands starts through the coalescence of small nanodots. XPS analysis suggests that the interface between small nanodots and substrate is abrupt with only weak Cu-O(SrTiO 3) interaction.

UR - http://www.scopus.com/inward/record.url?scp=10844284542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10844284542&partnerID=8YFLogxK

U2 - 10.1063/1.1819509

DO - 10.1063/1.1819509

M3 - Article

VL - 85

SP - 4481

EP - 4483

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -