Initial stages of oxide nanodot heteroepitaxial growth: Cu 2O on SrTiO 3(100)

I. Lyubinetsky, A. El-Azab, A. S. Lea, S. Thevuthasan, D. R. Baer

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Abstract

The growth mechanism in a heteroepitaxy of oxide nanodots is investigated by a combination of x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and theoretical modeling. In contrast to the majority of semiconductor systems, in the studied metal oxide system of Cu 2O-SrTiO 3(100) the growth process starts without wetting layer formation with the appearance of small (∼10 nm) square-based planar Cu 2O nanodots. Continued deposition leads mainly to increase of the nanodot density, practically, without change of their size. Only after reaching some critical density (∼ 10 13 cm -2 for 760 K growth temperature), growth of scattered, significantly larger islands starts through the coalescence of small nanodots. XPS analysis suggests that the interface between small nanodots and substrate is abrupt with only weak Cu-O(SrTiO 3) interaction.

Original languageEnglish
Pages (from-to)4481-4483
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
Publication statusPublished - 8 Nov 2004
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lyubinetsky, I., El-Azab, A., Lea, A. S., Thevuthasan, S., & Baer, D. R. (2004). Initial stages of oxide nanodot heteroepitaxial growth: Cu 2O on SrTiO 3(100). Applied Physics Letters, 85(19), 4481-4483. https://doi.org/10.1063/1.1819509