Influence of annealing temperature on the properties of non-stoichiometric Cu1.66Zn1.25GeSe4 thin films

Chinnaiyah Sripan, Vinod Madhavan, R. Ganesan, Annamraju Kasi Viswanath

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study focuses the annealing temperature influence on the fabrication of Cu1.66Zn1.25GeSe4 film. We have deposited of Cu1.66Zn1.25GeSe4 film as an absorber layer for the solar cell application using thermal evaporation technique. Various properties of the Cu1.66Zn1.25GeSe4 thin film were studied by characterization tools such as X-ray diffraction (XRD), Raman scattering, Field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Hall measurement set up. It is found that the annealing temperature have significant influence on the Cu1.66Zn1.25GeSe4 phase formation and only films annealed ≥ 773 K formed an impurity free single phase. Raman spectra shows that the as-prepared film have GeSe2 impurity phases and annealing at higher temperature (≥ 773 K) and selenization changes the alloy to impurity free crystalline phase. In the optical studies, the band gap of Cu1.66Zn1.25GeSe4 thin film selenized at 823 K is calculated to be 1.55 eV, which is very close to the optimum value for solar cell applications. The carrier concentration, resistance, conductivity and mobility of selenized thin film are 5.24 × 1015 cm−3, 2217.01 Ω/□, p-tye and 5.53 cm2V−1s−1 respectively. We also have confirmed the junction formation in Mo substrate/Cu1.66Zn1.25GeSe4/CdS device geometry. The study show an improvement in the Cu1.66Zn1.25GeSe4 properties are possible by controlled annealing and this material can be a promising candidate for thin film solar cells.

Original languageEnglish
Pages (from-to)134-138
Number of pages5
JournalSurfaces and Interfaces
Volume7
DOIs
Publication statusPublished - 1 Jun 2017

Fingerprint

Annealing
Thin films
Impurities
Raman scattering
Solar cells
Temperature
Thermal evaporation
Field emission
Fourier transform infrared spectroscopy
Carrier concentration
Energy gap
X ray photoelectron spectroscopy
Crystalline materials
Fabrication
X ray diffraction
Scanning electron microscopy
Geometry
Substrates
Thin film solar cells

Keywords

  • CZGSe
  • Non-stoichiometric
  • Thin film

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Influence of annealing temperature on the properties of non-stoichiometric Cu1.66Zn1.25GeSe4 thin films. / Sripan, Chinnaiyah; Madhavan, Vinod; Ganesan, R.; Viswanath, Annamraju Kasi.

In: Surfaces and Interfaces, Vol. 7, 01.06.2017, p. 134-138.

Research output: Contribution to journalArticle

Sripan, Chinnaiyah ; Madhavan, Vinod ; Ganesan, R. ; Viswanath, Annamraju Kasi. / Influence of annealing temperature on the properties of non-stoichiometric Cu1.66Zn1.25GeSe4 thin films. In: Surfaces and Interfaces. 2017 ; Vol. 7. pp. 134-138.
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abstract = "This study focuses the annealing temperature influence on the fabrication of Cu1.66Zn1.25GeSe4 film. We have deposited of Cu1.66Zn1.25GeSe4 film as an absorber layer for the solar cell application using thermal evaporation technique. Various properties of the Cu1.66Zn1.25GeSe4 thin film were studied by characterization tools such as X-ray diffraction (XRD), Raman scattering, Field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Hall measurement set up. It is found that the annealing temperature have significant influence on the Cu1.66Zn1.25GeSe4 phase formation and only films annealed ≥ 773 K formed an impurity free single phase. Raman spectra shows that the as-prepared film have GeSe2 impurity phases and annealing at higher temperature (≥ 773 K) and selenization changes the alloy to impurity free crystalline phase. In the optical studies, the band gap of Cu1.66Zn1.25GeSe4 thin film selenized at 823 K is calculated to be 1.55 eV, which is very close to the optimum value for solar cell applications. The carrier concentration, resistance, conductivity and mobility of selenized thin film are 5.24 × 1015 cm−3, 2217.01 Ω/□, p-tye and 5.53 cm2V−1s−1 respectively. We also have confirmed the junction formation in Mo substrate/Cu1.66Zn1.25GeSe4/CdS device geometry. The study show an improvement in the Cu1.66Zn1.25GeSe4 properties are possible by controlled annealing and this material can be a promising candidate for thin film solar cells.",
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AB - This study focuses the annealing temperature influence on the fabrication of Cu1.66Zn1.25GeSe4 film. We have deposited of Cu1.66Zn1.25GeSe4 film as an absorber layer for the solar cell application using thermal evaporation technique. Various properties of the Cu1.66Zn1.25GeSe4 thin film were studied by characterization tools such as X-ray diffraction (XRD), Raman scattering, Field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Hall measurement set up. It is found that the annealing temperature have significant influence on the Cu1.66Zn1.25GeSe4 phase formation and only films annealed ≥ 773 K formed an impurity free single phase. Raman spectra shows that the as-prepared film have GeSe2 impurity phases and annealing at higher temperature (≥ 773 K) and selenization changes the alloy to impurity free crystalline phase. In the optical studies, the band gap of Cu1.66Zn1.25GeSe4 thin film selenized at 823 K is calculated to be 1.55 eV, which is very close to the optimum value for solar cell applications. The carrier concentration, resistance, conductivity and mobility of selenized thin film are 5.24 × 1015 cm−3, 2217.01 Ω/□, p-tye and 5.53 cm2V−1s−1 respectively. We also have confirmed the junction formation in Mo substrate/Cu1.66Zn1.25GeSe4/CdS device geometry. The study show an improvement in the Cu1.66Zn1.25GeSe4 properties are possible by controlled annealing and this material can be a promising candidate for thin film solar cells.

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