Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis

Sergio Castellanos, Jasmin Hofstetter, Maulid Kivambe, Markus Rinio, Barry Lai, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dislocations limit solar cell performance by decreasing minority carrier diffusion length, leading to inefficient charge collection at the device contacts [1]. However, studies have shown that the recombination strength of dislocation clusters within millimeters away from each other can vary by orders of magnitude [2]. In this contribution, we present correlations between dislocation microstructure and recombination activity levels which span close to two orders of magnitude. We discuss a general trend observed: higher dislocation recombination activity appears to be correlated with a higher degree of impurity decoration, and a higher degree of disorder in the spatial distribution of etch pits. We present an approach to quantify the degree of disorder of dislocation clusters. Based on our observations, we hypothesize that the recombination activity of different dislocation clusters can be predicted by visual inspection of the etch pit distribution and geometry.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2957-2959
Number of pages3
ISBN (Print)9781479943982
DOIs
Publication statusPublished - 15 Oct 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver
Duration: 8 Jun 201413 Jun 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CityDenver
Period8/6/1413/6/14

Fingerprint

Silicon
Spatial distribution
Solar cells
Inspection
Impurities
Microstructure
Geometry

Keywords

  • cluster
  • dislocations
  • etch pit
  • multicrystalline
  • recombination activity
  • recombination strength
  • silicon
  • solar

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Castellanos, S., Hofstetter, J., Kivambe, M., Rinio, M., Lai, B., & Buonassisi, T. (2014). Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2957-2959). [6925551] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925551

Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis. / Castellanos, Sergio; Hofstetter, Jasmin; Kivambe, Maulid; Rinio, Markus; Lai, Barry; Buonassisi, Tonio.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2957-2959 6925551.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Castellanos, S, Hofstetter, J, Kivambe, M, Rinio, M, Lai, B & Buonassisi, T 2014, Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925551, Institute of Electrical and Electronics Engineers Inc., pp. 2957-2959, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, 8/6/14. https://doi.org/10.1109/PVSC.2014.6925551
Castellanos S, Hofstetter J, Kivambe M, Rinio M, Lai B, Buonassisi T. Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2957-2959. 6925551 https://doi.org/10.1109/PVSC.2014.6925551
Castellanos, Sergio ; Hofstetter, Jasmin ; Kivambe, Maulid ; Rinio, Markus ; Lai, Barry ; Buonassisi, Tonio. / Inferring dislocation recombination strength in multicrystalline silicon via etch pit geometry analysis. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2957-2959
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