Indolo-naphthyridine-6,13-dione thiophene building block for conjugated polymer electronics

Molecular origin of ultrahigh n-type mobility

Kealan J. Fallon, Nilushi Wijeyasinghe, Eric F. Manley, Stoichko D. Dimitrov, Syeda A. Yousaf, Raja S. Ashraf, Warren Duffy, Anne A.Y. Guilbert, David M.E. Freeman, Mohammed Al-Hashimi, Jenny Nelson, James R. Durrant, Lin X. Chen, Iain McCulloch, Tobin J. Marks, Tracey M. Clarke, Thomas D. Anthopoulos, Hugo Bronstein

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Herein, we present the synthesis and characterization of four conjugated polymers containing a novel chromophore for organic electronics based on an indigoid structure. These polymers exhibit extremely small band gaps of ∼1.2 eV, impressive crystallinity, and extremely high n-type mobility exceeding 3 cm2 V s-1. The n-type charge carrier mobility can be correlated with the remarkably high crystallinity along the polymer backbone having a correlation length in excess of 20 nm. Theoretical analysis reveals that the novel polymers have highly rigid nonplanar geometries demonstrating that backbone planarity is not a prerequisite for either narrow band gap materials or ultrahigh mobilities. Furthermore, the variation in backbone crystallinity is dependent on the choice of comonomer. OPV device efficiencies up to 4.1% and charge photogeneration up to 1000 nm are demonstrated, highlighting the potential of this novel chromophore class in high-performance organic electronics.

Original languageEnglish
Pages (from-to)8366-8378
Number of pages13
JournalChemistry of Materials
Volume28
Issue number22
DOIs
Publication statusPublished - 22 Nov 2016

Fingerprint

Naphthyridines
Molecular electronics
Thiophenes
Conjugated polymers
Thiophene
Polymers
Chromophores
Energy gap
Electronic equipment
Carrier mobility
Charge carriers
Geometry

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Fallon, K. J., Wijeyasinghe, N., Manley, E. F., Dimitrov, S. D., Yousaf, S. A., Ashraf, R. S., ... Bronstein, H. (2016). Indolo-naphthyridine-6,13-dione thiophene building block for conjugated polymer electronics: Molecular origin of ultrahigh n-type mobility. Chemistry of Materials, 28(22), 8366-8378. https://doi.org/10.1021/acs.chemmater.6b03671

Indolo-naphthyridine-6,13-dione thiophene building block for conjugated polymer electronics : Molecular origin of ultrahigh n-type mobility. / Fallon, Kealan J.; Wijeyasinghe, Nilushi; Manley, Eric F.; Dimitrov, Stoichko D.; Yousaf, Syeda A.; Ashraf, Raja S.; Duffy, Warren; Guilbert, Anne A.Y.; Freeman, David M.E.; Al-Hashimi, Mohammed; Nelson, Jenny; Durrant, James R.; Chen, Lin X.; McCulloch, Iain; Marks, Tobin J.; Clarke, Tracey M.; Anthopoulos, Thomas D.; Bronstein, Hugo.

In: Chemistry of Materials, Vol. 28, No. 22, 22.11.2016, p. 8366-8378.

Research output: Contribution to journalArticle

Fallon, KJ, Wijeyasinghe, N, Manley, EF, Dimitrov, SD, Yousaf, SA, Ashraf, RS, Duffy, W, Guilbert, AAY, Freeman, DME, Al-Hashimi, M, Nelson, J, Durrant, JR, Chen, LX, McCulloch, I, Marks, TJ, Clarke, TM, Anthopoulos, TD & Bronstein, H 2016, 'Indolo-naphthyridine-6,13-dione thiophene building block for conjugated polymer electronics: Molecular origin of ultrahigh n-type mobility', Chemistry of Materials, vol. 28, no. 22, pp. 8366-8378. https://doi.org/10.1021/acs.chemmater.6b03671
Fallon, Kealan J. ; Wijeyasinghe, Nilushi ; Manley, Eric F. ; Dimitrov, Stoichko D. ; Yousaf, Syeda A. ; Ashraf, Raja S. ; Duffy, Warren ; Guilbert, Anne A.Y. ; Freeman, David M.E. ; Al-Hashimi, Mohammed ; Nelson, Jenny ; Durrant, James R. ; Chen, Lin X. ; McCulloch, Iain ; Marks, Tobin J. ; Clarke, Tracey M. ; Anthopoulos, Thomas D. ; Bronstein, Hugo. / Indolo-naphthyridine-6,13-dione thiophene building block for conjugated polymer electronics : Molecular origin of ultrahigh n-type mobility. In: Chemistry of Materials. 2016 ; Vol. 28, No. 22. pp. 8366-8378.
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