Indium sulfide thin films deposited by the spray ion layer gas reaction technique

N. A. Allsop, A. Schönmann, Abdelhak Belaidi, H. J. Muffler, B. Mertesacker, W. Bohne, E. Strub, J. Röhrich, M. C. Lux-Steiner, Ch H. Fischer

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalThin Solid Films
Volume513
Issue number1-2
DOIs
Publication statusPublished - 14 Aug 2006
Externally publishedYes

Fingerprint

Indium sulfide
indium sulfides
sprayers
Gases
Ions
Thin films
Indium
thin films
gases
indium
Hydrogen Sulfide
ions
Hydrogen sulfide
Buffer layers
hydrogen sulfide
Solar cells
Energy gap
Vapors
sulfides
buffers

Keywords

  • Deposition process
  • Indium sulfide
  • Ion layer gas reaction - ILGAR
  • Spray deposition
  • X-ray diffraction
  • X-ray flourescence

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Allsop, N. A., Schönmann, A., Belaidi, A., Muffler, H. J., Mertesacker, B., Bohne, W., ... Fischer, C. H. (2006). Indium sulfide thin films deposited by the spray ion layer gas reaction technique. Thin Solid Films, 513(1-2), 52-56. https://doi.org/10.1016/j.tsf.2006.01.019

Indium sulfide thin films deposited by the spray ion layer gas reaction technique. / Allsop, N. A.; Schönmann, A.; Belaidi, Abdelhak; Muffler, H. J.; Mertesacker, B.; Bohne, W.; Strub, E.; Röhrich, J.; Lux-Steiner, M. C.; Fischer, Ch H.

In: Thin Solid Films, Vol. 513, No. 1-2, 14.08.2006, p. 52-56.

Research output: Contribution to journalArticle

Allsop, NA, Schönmann, A, Belaidi, A, Muffler, HJ, Mertesacker, B, Bohne, W, Strub, E, Röhrich, J, Lux-Steiner, MC & Fischer, CH 2006, 'Indium sulfide thin films deposited by the spray ion layer gas reaction technique', Thin Solid Films, vol. 513, no. 1-2, pp. 52-56. https://doi.org/10.1016/j.tsf.2006.01.019
Allsop, N. A. ; Schönmann, A. ; Belaidi, Abdelhak ; Muffler, H. J. ; Mertesacker, B. ; Bohne, W. ; Strub, E. ; Röhrich, J. ; Lux-Steiner, M. C. ; Fischer, Ch H. / Indium sulfide thin films deposited by the spray ion layer gas reaction technique. In: Thin Solid Films. 2006 ; Vol. 513, No. 1-2. pp. 52-56.
@article{76af6226091041c9a5f399a76bd704dd,
title = "Indium sulfide thin films deposited by the spray ion layer gas reaction technique",
abstract = "The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.",
keywords = "Deposition process, Indium sulfide, Ion layer gas reaction - ILGAR, Spray deposition, X-ray diffraction, X-ray flourescence",
author = "Allsop, {N. A.} and A. Sch{\"o}nmann and Abdelhak Belaidi and Muffler, {H. J.} and B. Mertesacker and W. Bohne and E. Strub and J. R{\"o}hrich and Lux-Steiner, {M. C.} and Fischer, {Ch H.}",
year = "2006",
month = "8",
day = "14",
doi = "10.1016/j.tsf.2006.01.019",
language = "English",
volume = "513",
pages = "52--56",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Indium sulfide thin films deposited by the spray ion layer gas reaction technique

AU - Allsop, N. A.

AU - Schönmann, A.

AU - Belaidi, Abdelhak

AU - Muffler, H. J.

AU - Mertesacker, B.

AU - Bohne, W.

AU - Strub, E.

AU - Röhrich, J.

AU - Lux-Steiner, M. C.

AU - Fischer, Ch H.

PY - 2006/8/14

Y1 - 2006/8/14

N2 - The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.

AB - The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.

KW - Deposition process

KW - Indium sulfide

KW - Ion layer gas reaction - ILGAR

KW - Spray deposition

KW - X-ray diffraction

KW - X-ray flourescence

UR - http://www.scopus.com/inward/record.url?scp=33746984553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746984553&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.01.019

DO - 10.1016/j.tsf.2006.01.019

M3 - Article

AN - SCOPUS:33746984553

VL - 513

SP - 52

EP - 56

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -