Indium sulfide thin films deposited by the spray ion layer gas reaction technique

N. A. Allsop, A. Schönmann, A. Belaidi, H. J. Muffler, B. Mertesacker, W. Bohne, E. Strub, J. Röhrich, M. C. Lux-Steiner, Ch H. Fischer

Research output: Contribution to journalArticle

56 Citations (Scopus)


The Spray Ion Layer Gas Reaction (Spray-ILGAR) technique is a new variation on the ILGAR technique used to prepare chalcogenide thin films. High quality indium sulfide thin films were produced by Spray-ILGAR with an indirect bandgap of 2.2 eV and a high suitability for use as buffer layers in chalcopyrite solar cells. The process involves the cyclical spray deposition of an indium containing precursor layer followed by its conversion to sulfide using hydrogen sulfide gas. Analysis of the deposition reveals that the indium chloride based precursor is transported via the vapour phase from the spray droplets to the substrate surface.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 14 Aug 2006



  • Deposition process
  • Indium sulfide
  • Ion layer gas reaction - ILGAR
  • Spray deposition
  • X-ray diffraction
  • X-ray flourescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Allsop, N. A., Schönmann, A., Belaidi, A., Muffler, H. J., Mertesacker, B., Bohne, W., Strub, E., Röhrich, J., Lux-Steiner, M. C., & Fischer, C. H. (2006). Indium sulfide thin films deposited by the spray ion layer gas reaction technique. Thin Solid Films, 513(1-2), 52-56.