In situ semiconductor surface characterization: A comparative infrared study of Si, Ge and GaAs

J. N. Chazalviel, Abdelhak Belaidi, M. Safi, F. Maroun, B. H. Erné, F. Ozanam

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The surface of Si, Ge and GaAs electrodes has been investigated by infrared spectroscopy, which provides in situ information on chemical species at the electrochemical interface. Special attention was paid to adsorbed hydrogen and hydroxyl and to oxide formation. In fluoride medium and at open circuit potential (OCP) the Si surface is completely hydrogenated and is oxidized only upon imposing a large anodic current. Conversely, GaAs is oxidized at OCP, and AsH bonds appear on the surface only in the presence of a cathodic current sufficient to compete with surface oxidation by oxygen dissolved in the electrolyte. Upon potential cycling, the surface of germanium undergoes nearly reversible changes between a hydroxylated and a hydrogenated state, and may be found in either state at OCP, depending upon its history. In situ IR spectroscopy allows one to rationalize the very different behaviours of surface reactivity found for these otherwise rather similar semiconductors and to determine the electrochemical reaction mechanisms.

Original languageEnglish
Pages (from-to)3205-3211
Number of pages7
JournalElectrochimica Acta
Volume45
Issue number20
DOIs
Publication statusPublished - 23 Jun 2000
Externally publishedYes

Fingerprint

Semiconductor materials
Infrared radiation
Networks (circuits)
Infrared spectroscopy
Germanium
Dissolved oxygen
Fluorides
Hydroxyl Radical
Oxides
Electrolytes
gallium arsenide
Hydrogen
Oxidation
Electrodes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

In situ semiconductor surface characterization : A comparative infrared study of Si, Ge and GaAs. / Chazalviel, J. N.; Belaidi, Abdelhak; Safi, M.; Maroun, F.; Erné, B. H.; Ozanam, F.

In: Electrochimica Acta, Vol. 45, No. 20, 23.06.2000, p. 3205-3211.

Research output: Contribution to journalArticle

Chazalviel, J. N. ; Belaidi, Abdelhak ; Safi, M. ; Maroun, F. ; Erné, B. H. ; Ozanam, F. / In situ semiconductor surface characterization : A comparative infrared study of Si, Ge and GaAs. In: Electrochimica Acta. 2000 ; Vol. 45, No. 20. pp. 3205-3211.
@article{d3d9a462de504c21960b3e8dd609bb09,
title = "In situ semiconductor surface characterization: A comparative infrared study of Si, Ge and GaAs",
abstract = "The surface of Si, Ge and GaAs electrodes has been investigated by infrared spectroscopy, which provides in situ information on chemical species at the electrochemical interface. Special attention was paid to adsorbed hydrogen and hydroxyl and to oxide formation. In fluoride medium and at open circuit potential (OCP) the Si surface is completely hydrogenated and is oxidized only upon imposing a large anodic current. Conversely, GaAs is oxidized at OCP, and AsH bonds appear on the surface only in the presence of a cathodic current sufficient to compete with surface oxidation by oxygen dissolved in the electrolyte. Upon potential cycling, the surface of germanium undergoes nearly reversible changes between a hydroxylated and a hydrogenated state, and may be found in either state at OCP, depending upon its history. In situ IR spectroscopy allows one to rationalize the very different behaviours of surface reactivity found for these otherwise rather similar semiconductors and to determine the electrochemical reaction mechanisms.",
author = "Chazalviel, {J. N.} and Abdelhak Belaidi and M. Safi and F. Maroun and Ern{\'e}, {B. H.} and F. Ozanam",
year = "2000",
month = "6",
day = "23",
doi = "10.1016/S0013-4686(00)00424-2",
language = "English",
volume = "45",
pages = "3205--3211",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier Limited",
number = "20",

}

TY - JOUR

T1 - In situ semiconductor surface characterization

T2 - A comparative infrared study of Si, Ge and GaAs

AU - Chazalviel, J. N.

AU - Belaidi, Abdelhak

AU - Safi, M.

AU - Maroun, F.

AU - Erné, B. H.

AU - Ozanam, F.

PY - 2000/6/23

Y1 - 2000/6/23

N2 - The surface of Si, Ge and GaAs electrodes has been investigated by infrared spectroscopy, which provides in situ information on chemical species at the electrochemical interface. Special attention was paid to adsorbed hydrogen and hydroxyl and to oxide formation. In fluoride medium and at open circuit potential (OCP) the Si surface is completely hydrogenated and is oxidized only upon imposing a large anodic current. Conversely, GaAs is oxidized at OCP, and AsH bonds appear on the surface only in the presence of a cathodic current sufficient to compete with surface oxidation by oxygen dissolved in the electrolyte. Upon potential cycling, the surface of germanium undergoes nearly reversible changes between a hydroxylated and a hydrogenated state, and may be found in either state at OCP, depending upon its history. In situ IR spectroscopy allows one to rationalize the very different behaviours of surface reactivity found for these otherwise rather similar semiconductors and to determine the electrochemical reaction mechanisms.

AB - The surface of Si, Ge and GaAs electrodes has been investigated by infrared spectroscopy, which provides in situ information on chemical species at the electrochemical interface. Special attention was paid to adsorbed hydrogen and hydroxyl and to oxide formation. In fluoride medium and at open circuit potential (OCP) the Si surface is completely hydrogenated and is oxidized only upon imposing a large anodic current. Conversely, GaAs is oxidized at OCP, and AsH bonds appear on the surface only in the presence of a cathodic current sufficient to compete with surface oxidation by oxygen dissolved in the electrolyte. Upon potential cycling, the surface of germanium undergoes nearly reversible changes between a hydroxylated and a hydrogenated state, and may be found in either state at OCP, depending upon its history. In situ IR spectroscopy allows one to rationalize the very different behaviours of surface reactivity found for these otherwise rather similar semiconductors and to determine the electrochemical reaction mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=0342521315&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342521315&partnerID=8YFLogxK

U2 - 10.1016/S0013-4686(00)00424-2

DO - 10.1016/S0013-4686(00)00424-2

M3 - Article

AN - SCOPUS:0342521315

VL - 45

SP - 3205

EP - 3211

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

IS - 20

ER -