In situ analysis of the Zn(S,O) buffer layer preparation for chalcopyrite solar cells by Zn L-edge X-ray absorption spectroscopy

Iver Lauermann, Timo Kropp, Damien Vottier, Ahmed Ennaoui, Wolfgang Eberhardt, Emad F. Aziz

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

(Figure Presented) Bridging the gap between high-vacuum soft X-ray absorption spectroscopy and real systems under ambient conditions probes chemical reactions in situ during deposition and annealing processes. The origin of highly efficient buffer layers in Zn(S,O) is the complex formation between Zn2+ and the S=C group of thiourea (see schematic), which allows ligand-to-metal and metal-to-ligand charge transfer (LMCT and MLCT).

Original languageEnglish
Pages (from-to)532-535
Number of pages4
JournalChemPhysChem
Volume10
Issue number3
DOIs
Publication statusPublished - 23 Feb 2009
Externally publishedYes

Fingerprint

X-Ray Absorption Spectroscopy
X ray absorption spectroscopy
Buffer layers
Solar cells
Buffers
absorption spectroscopy
buffers
solar cells
Metals
Ligands
Thiourea
preparation
ligands
thioureas
circuit diagrams
Schematic diagrams
Vacuum
high vacuum
metals
Charge transfer

Keywords

  • Ab initio calculations
  • Chalcopyrites
  • Solar cells
  • X-ray absorption spectroscopy
  • Zinc

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Atomic and Molecular Physics, and Optics

Cite this

In situ analysis of the Zn(S,O) buffer layer preparation for chalcopyrite solar cells by Zn L-edge X-ray absorption spectroscopy. / Lauermann, Iver; Kropp, Timo; Vottier, Damien; Ennaoui, Ahmed; Eberhardt, Wolfgang; Aziz, Emad F.

In: ChemPhysChem, Vol. 10, No. 3, 23.02.2009, p. 532-535.

Research output: Contribution to journalArticle

Lauermann, Iver ; Kropp, Timo ; Vottier, Damien ; Ennaoui, Ahmed ; Eberhardt, Wolfgang ; Aziz, Emad F. / In situ analysis of the Zn(S,O) buffer layer preparation for chalcopyrite solar cells by Zn L-edge X-ray absorption spectroscopy. In: ChemPhysChem. 2009 ; Vol. 10, No. 3. pp. 532-535.
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