Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

M. S. Rajachidambaram, A. Pandey, S. Vilayurganapathy, P. Nachimuthu, S. Thevuthasan, G. S. Herman

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Abstract

The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on the exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

Original languageEnglish
Article number171602
JournalApplied Physics Letters
Volume103
Issue number17
DOIs
Publication statusPublished - 21 Oct 2013
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rajachidambaram, M. S., Pandey, A., Vilayurganapathy, S., Nachimuthu, P., Thevuthasan, S., & Herman, G. S. (2013). Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. Applied Physics Letters, 103(17), [171602]. https://doi.org/10.1063/1.4826457