Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

M. S. Rajachidambaram, A. Pandey, S. Vilayurganapathy, P. Nachimuthu, S. Thevuthasan, G. S. Herman

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on the exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.

Original languageEnglish
Article number171602
JournalApplied Physics Letters
Volume103
Issue number17
DOIs
Publication statusPublished - 21 Oct 2013
Externally publishedYes

Fingerprint

zinc oxides
tin oxides
passivity
transistors
thin films
stress measurement
shift
electric potential
x ray spectroscopy
trapping
photoelectron spectroscopy
chemistry
injection
acids
adsorption
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rajachidambaram, M. S., Pandey, A., Vilayurganapathy, S., Nachimuthu, P., Thevuthasan, S., & Herman, G. S. (2013). Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. Applied Physics Letters, 103(17), [171602]. https://doi.org/10.1063/1.4826457

Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. / Rajachidambaram, M. S.; Pandey, A.; Vilayurganapathy, S.; Nachimuthu, P.; Thevuthasan, S.; Herman, G. S.

In: Applied Physics Letters, Vol. 103, No. 17, 171602, 21.10.2013.

Research output: Contribution to journalArticle

Rajachidambaram, MS, Pandey, A, Vilayurganapathy, S, Nachimuthu, P, Thevuthasan, S & Herman, GS 2013, 'Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation', Applied Physics Letters, vol. 103, no. 17, 171602. https://doi.org/10.1063/1.4826457
Rajachidambaram MS, Pandey A, Vilayurganapathy S, Nachimuthu P, Thevuthasan S, Herman GS. Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. Applied Physics Letters. 2013 Oct 21;103(17). 171602. https://doi.org/10.1063/1.4826457
Rajachidambaram, M. S. ; Pandey, A. ; Vilayurganapathy, S. ; Nachimuthu, P. ; Thevuthasan, S. ; Herman, G. S. / Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. In: Applied Physics Letters. 2013 ; Vol. 103, No. 17.
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