Imaging of near-neighbor atoms in semiconductors by photoelectron holography

G. S. Herman, S. Thevuthasan, T. T. Tran, Y. J. Kim, C. S. Fadley

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    Abstract

    We have measured and calculated the full intensity profiles for Si 2p photoelectron emission from Si(111), and have analyzed these via a two-dimensional Fourier-transform holographic inversion procedure. The resulting images associated with two symmetry-inequivalent emitter types exhibit elongated features corresponding to near-neighbor atoms in the first (111) double layer above a given emitter, and are found to improve in quality if strong forward-scattering peaks are removed in a smooth way.

    Original languageEnglish
    Pages (from-to)650-653
    Number of pages4
    JournalPhysical Review Letters
    Volume68
    Issue number5
    DOIs
    Publication statusPublished - 1 Jan 1992

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Herman, G. S., Thevuthasan, S., Tran, T. T., Kim, Y. J., & Fadley, C. S. (1992). Imaging of near-neighbor atoms in semiconductors by photoelectron holography. Physical Review Letters, 68(5), 650-653. https://doi.org/10.1103/PhysRevLett.68.650