Hydrogen passivation and activation of oxygen complexes in silicon

Sergey Rashkeev, M. Di Ventra, S. T. Pantelides

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a hydrogen atom in the core structure of thermal donors can account for the NL10 electron-paramagnetic-resonance signal. The interaction of H with the thermal-donor-like defects at the Si-SiO2 is also discussed.

Original languageEnglish
Pages (from-to)1571-1573
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number11
DOIs
Publication statusPublished - 12 Mar 2001
Externally publishedYes

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passivity
activation
silicon
oxygen
hydrogen
hydrogen atoms
electron paramagnetic resonance
defects
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hydrogen passivation and activation of oxygen complexes in silicon. / Rashkeev, Sergey; Di Ventra, M.; Pantelides, S. T.

In: Applied Physics Letters, Vol. 78, No. 11, 12.03.2001, p. 1571-1573.

Research output: Contribution to journalArticle

Rashkeev, Sergey ; Di Ventra, M. ; Pantelides, S. T. / Hydrogen passivation and activation of oxygen complexes in silicon. In: Applied Physics Letters. 2001 ; Vol. 78, No. 11. pp. 1571-1573.
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