Hydrogen passivation and activation of oxygen complexes in silicon

S. N. Rashkeev, M. Di Ventra, S. T. Pantelides

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Abstract

We report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a hydrogen atom in the core structure of thermal donors can account for the NL10 electron-paramagnetic-resonance signal. The interaction of H with the thermal-donor-like defects at the Si-SiO2 is also discussed.

Original languageEnglish
Pages (from-to)1571-1573
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number11
DOIs
Publication statusPublished - 12 Mar 2001

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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