Hydrogen in MOSFETs - A primary agent of reliability issues

Sokrates T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

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48 Citations (Scopus)

Abstract

Hydrogen plays an important role in MOSFETS as it is intentionally introduced to passivate defects (primarily Si dangling bonds) at the Si-SiO2 interface. At the same time, hydrogen has long been known to be involved in many degradation processes, with much attention being devoted recently to bias-temperature instability (BTI). Here, we give an overview of extensive theoretical results that provide a comprehensive picture of the role that hydrogen plays in several radiation-induced degradation modes and BTI. We identify a common origin for several degradation phenomena: H is released as H+ by holes either in the oxide or in Si and is driven to the interface by a positive or negative bias, respectively, where it depassivates dangling bonds via the formation of H2 molecules. We close with a note about the role of hydrogen as a main agent for aging of microelectronics.

Original languageEnglish
Pages (from-to)903-911
Number of pages9
JournalMicroelectronics Reliability
Volume47
Issue number6
DOIs
Publication statusPublished - 1 Jun 2007

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Pantelides, S. T., Tsetseris, L., Rashkeev, S. N., Zhou, X. J., Fleetwood, D. M., & Schrimpf, R. D. (2007). Hydrogen in MOSFETs - A primary agent of reliability issues. Microelectronics Reliability, 47(6), 903-911. https://doi.org/10.1016/j.microrel.2006.10.011