Hydrogen in MOSFETs - A primary agent of reliability issues

Sokrates T. Pantelides, L. Tsetseris, Sergey Rashkeev, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Hydrogen plays an important role in MOSFETS as it is intentionally introduced to passivate defects (primarily Si dangling bonds) at the Si-SiO2 interface. At the same time, hydrogen has long been known to be involved in many degradation processes, with much attention being devoted recently to bias-temperature instability (BTI). Here, we give an overview of extensive theoretical results that provide a comprehensive picture of the role that hydrogen plays in several radiation-induced degradation modes and BTI. We identify a common origin for several degradation phenomena: H is released as H+ by holes either in the oxide or in Si and is driven to the interface by a positive or negative bias, respectively, where it depassivates dangling bonds via the formation of H2 molecules. We close with a note about the role of hydrogen as a main agent for aging of microelectronics.

Original languageEnglish
Pages (from-to)903-911
Number of pages9
JournalMicroelectronics Reliability
Volume47
Issue number6
DOIs
Publication statusPublished - 1 Jun 2007
Externally publishedYes

Fingerprint

Hydrogen
field effect transistors
Dangling bonds
hydrogen
degradation
Degradation
microelectronics
Microelectronics
Oxides
Aging of materials
Radiation
Temperature
Defects
Molecules
temperature
oxides
defects
radiation
molecules

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Pantelides, S. T., Tsetseris, L., Rashkeev, S., Zhou, X. J., Fleetwood, D. M., & Schrimpf, R. D. (2007). Hydrogen in MOSFETs - A primary agent of reliability issues. Microelectronics Reliability, 47(6), 903-911. https://doi.org/10.1016/j.microrel.2006.10.011

Hydrogen in MOSFETs - A primary agent of reliability issues. / Pantelides, Sokrates T.; Tsetseris, L.; Rashkeev, Sergey; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.

In: Microelectronics Reliability, Vol. 47, No. 6, 01.06.2007, p. 903-911.

Research output: Contribution to journalArticle

Pantelides, ST, Tsetseris, L, Rashkeev, S, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2007, 'Hydrogen in MOSFETs - A primary agent of reliability issues', Microelectronics Reliability, vol. 47, no. 6, pp. 903-911. https://doi.org/10.1016/j.microrel.2006.10.011
Pantelides, Sokrates T. ; Tsetseris, L. ; Rashkeev, Sergey ; Zhou, X. J. ; Fleetwood, D. M. ; Schrimpf, R. D. / Hydrogen in MOSFETs - A primary agent of reliability issues. In: Microelectronics Reliability. 2007 ; Vol. 47, No. 6. pp. 903-911.
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