Hydrogen behavior in Mg+-implanted graphite

Weilin Jiang, V. Shutthanandan, Y. Zhang, S. Thevuthasan, W. J. Weber, G. J. Exarhos

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A graphite wafer has been implanted with Mg+ to produce a uniform Mg concentration. Subsequent H+ implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+ and H+ ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalJournal of Materials Research
Volume21
Issue number4
DOIs
Publication statusPublished - Apr 2006
Externally publishedYes

Fingerprint

Graphite
Hydrogen
graphite
hydrogen
Ion beams
implantation
ion beams
trapping
wafers
Annealing
Ions
annealing
ions
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Jiang, W., Shutthanandan, V., Zhang, Y., Thevuthasan, S., Weber, W. J., & Exarhos, G. J. (2006). Hydrogen behavior in Mg+-implanted graphite. Journal of Materials Research, 21(4), 811-815. https://doi.org/10.1557/jmr.2006.0121

Hydrogen behavior in Mg+-implanted graphite. / Jiang, Weilin; Shutthanandan, V.; Zhang, Y.; Thevuthasan, S.; Weber, W. J.; Exarhos, G. J.

In: Journal of Materials Research, Vol. 21, No. 4, 04.2006, p. 811-815.

Research output: Contribution to journalArticle

Jiang, W, Shutthanandan, V, Zhang, Y, Thevuthasan, S, Weber, WJ & Exarhos, GJ 2006, 'Hydrogen behavior in Mg+-implanted graphite', Journal of Materials Research, vol. 21, no. 4, pp. 811-815. https://doi.org/10.1557/jmr.2006.0121
Jiang W, Shutthanandan V, Zhang Y, Thevuthasan S, Weber WJ, Exarhos GJ. Hydrogen behavior in Mg+-implanted graphite. Journal of Materials Research. 2006 Apr;21(4):811-815. https://doi.org/10.1557/jmr.2006.0121
Jiang, Weilin ; Shutthanandan, V. ; Zhang, Y. ; Thevuthasan, S. ; Weber, W. J. ; Exarhos, G. J. / Hydrogen behavior in Mg+-implanted graphite. In: Journal of Materials Research. 2006 ; Vol. 21, No. 4. pp. 811-815.
@article{5b2397212c3c476a952fa0f7beb5267d,
title = "Hydrogen behavior in Mg+-implanted graphite",
abstract = "A graphite wafer has been implanted with Mg+ to produce a uniform Mg concentration. Subsequent H+ implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+ and H+ ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.",
author = "Weilin Jiang and V. Shutthanandan and Y. Zhang and S. Thevuthasan and Weber, {W. J.} and Exarhos, {G. J.}",
year = "2006",
month = "4",
doi = "10.1557/jmr.2006.0121",
language = "English",
volume = "21",
pages = "811--815",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "4",

}

TY - JOUR

T1 - Hydrogen behavior in Mg+-implanted graphite

AU - Jiang, Weilin

AU - Shutthanandan, V.

AU - Zhang, Y.

AU - Thevuthasan, S.

AU - Weber, W. J.

AU - Exarhos, G. J.

PY - 2006/4

Y1 - 2006/4

N2 - A graphite wafer has been implanted with Mg+ to produce a uniform Mg concentration. Subsequent H+ implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+ and H+ ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.

AB - A graphite wafer has been implanted with Mg+ to produce a uniform Mg concentration. Subsequent H+ implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+ and H+ ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.

UR - http://www.scopus.com/inward/record.url?scp=33744537564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744537564&partnerID=8YFLogxK

U2 - 10.1557/jmr.2006.0121

DO - 10.1557/jmr.2006.0121

M3 - Article

VL - 21

SP - 811

EP - 815

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 4

ER -