Hydrogen behavior in Mg+-implanted graphite

Weilin Jiang, V. Shutthanandan, Y. Zhang, S. Thevuthasan, W. J. Weber, G. J. Exarhos

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Abstract

A graphite wafer has been implanted with Mg+ to produce a uniform Mg concentration. Subsequent H+ implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+ and H+ ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalJournal of Materials Research
Volume21
Issue number4
DOIs
Publication statusPublished - Apr 2006
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Jiang, W., Shutthanandan, V., Zhang, Y., Thevuthasan, S., Weber, W. J., & Exarhos, G. J. (2006). Hydrogen behavior in Mg+-implanted graphite. Journal of Materials Research, 21(4), 811-815. https://doi.org/10.1557/jmr.2006.0121