Highly textured films of layered metal disulfide 2H-WS2

Preparation and optoelectronic properties

A. Matthäus, A. Ennaoui, S. Fiechter, S. Tiefenbacher, T. Kiesewetter, K. Diesner, I. Sieber, W. Jaegermann, T. Tsirlina, R. Tenne

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

Highly textured films of 2H-WS2 can be obtained by sulfurization of up to 4 μm thick WO3 layers in the presence of hydrogen using amorphous (quartz glass, glassy carbon) or crystalline (sapphire, muscovite, highly oriented pyrolytic graphite) substrates. Best conditions have been found employing (00.1) oriented sapphire substrates with a 5 nm thick nickel layer interposed between substrate and oxide film (0.5 to 4 μm thickness) and a reaction temperature ranging from 973 to 1173 K. Depending on time the crystallites, oriented with their hexagonal basal planes parallel to the substrate, exhibited a lateral extension of up to 20 μm and a thickness of ≤300 nm. Conductivity measurements of the films showed a p-type conductivity in the range from 0.1 to 3 Ω-1 cm-1 and a lateral mobility as high as 105 cm2 V-1 S-1 at room temperature. The conductivity type has been confirmed by ultraviolet photoelectron and x-ray photoelectron spectroscopy which were compared with n-type single crystals. A freestanding film pealed off from a Pt coated quartz substrate and mounted on a brass holder was investigated photoelectrochemically. Using a 0.2 M Fe2+/Fe3+ redox electrolyte in 0.5 M H2SO4 an open-circuit voltage of ≈100 mV and a short-circuit current of 5 mA/cm2 has been detected for the first time.

Original languageEnglish
Pages (from-to)1013-1019
Number of pages7
JournalJournal of the Electrochemical Society
Volume144
Issue number3
Publication statusPublished - Mar 1997
Externally publishedYes

Fingerprint

disulfides
Disulfides
Optoelectronic devices
Metals
preparation
Substrates
Quartz
metals
Aluminum Oxide
Sapphire
conductivity
sapphire
quartz
Graphite
muscovite
pyrolytic graphite
brasses
glassy carbon
Glassy carbon
Brass

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Matthäus, A., Ennaoui, A., Fiechter, S., Tiefenbacher, S., Kiesewetter, T., Diesner, K., ... Tenne, R. (1997). Highly textured films of layered metal disulfide 2H-WS2: Preparation and optoelectronic properties. Journal of the Electrochemical Society, 144(3), 1013-1019.

Highly textured films of layered metal disulfide 2H-WS2 : Preparation and optoelectronic properties. / Matthäus, A.; Ennaoui, A.; Fiechter, S.; Tiefenbacher, S.; Kiesewetter, T.; Diesner, K.; Sieber, I.; Jaegermann, W.; Tsirlina, T.; Tenne, R.

In: Journal of the Electrochemical Society, Vol. 144, No. 3, 03.1997, p. 1013-1019.

Research output: Contribution to journalArticle

Matthäus, A, Ennaoui, A, Fiechter, S, Tiefenbacher, S, Kiesewetter, T, Diesner, K, Sieber, I, Jaegermann, W, Tsirlina, T & Tenne, R 1997, 'Highly textured films of layered metal disulfide 2H-WS2: Preparation and optoelectronic properties', Journal of the Electrochemical Society, vol. 144, no. 3, pp. 1013-1019.
Matthäus A, Ennaoui A, Fiechter S, Tiefenbacher S, Kiesewetter T, Diesner K et al. Highly textured films of layered metal disulfide 2H-WS2: Preparation and optoelectronic properties. Journal of the Electrochemical Society. 1997 Mar;144(3):1013-1019.
Matthäus, A. ; Ennaoui, A. ; Fiechter, S. ; Tiefenbacher, S. ; Kiesewetter, T. ; Diesner, K. ; Sieber, I. ; Jaegermann, W. ; Tsirlina, T. ; Tenne, R. / Highly textured films of layered metal disulfide 2H-WS2 : Preparation and optoelectronic properties. In: Journal of the Electrochemical Society. 1997 ; Vol. 144, No. 3. pp. 1013-1019.
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