Highly oriented and conducting Bi doped ZnO (BZO) layers chemically sprayed using nitrogen gas carrier

F. Chouikh, Y. Beggah, Nouar Tabet, N. Ariche, M. S. Aida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, we have successfully prepared the highly conducting and transparent Bi doped ZnO (BZO) thin films using pneumatic spray pyrolysis technique with nitrogen (N2) carrier gas. The evolutions of structural, morphological and opto-electrical properties of the BZO films as a function of Bi concentration were analyzed. It is found that the films are uniform with no haze or visible clusters. X-ray diffraction shows that all the films were polycrystalline with hexagonal wurtzite structure, without secondary phases. All the BZO layers exhibit the classical preferential orientation of (002) plane and it changes in favor of (100) plane at 3 wt% Bi. The BZO thin films showed 83% as a value of average optical transmittance in the visible region. The optical band gap values oscillated around 3.23 and 3.27 eV. The SEM micrographs show clusters and nano-crystalline grains with special shape on the surface. The photoluminescence spectra of the films exhibits ultraviolet and green emissions. The electrical resistivity reaches a minimum value (8.4310−3 Ωcm) at 1 wt% Bi.

Original languageEnglish
Pages (from-to)39-46
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume64
DOIs
Publication statusPublished - 15 Jun 2017

Fingerprint

Nitrogen
Gases
nitrogen
conduction
gases
Thin films
haze
Spray pyrolysis
ultraviolet emission
pneumatics
Optical band gaps
Opacity
thin films
wurtzite
Pneumatics
pyrolysis
sprayers
transmittance
Photoluminescence
Electric properties

Keywords

  • Bi doped ZnO
  • Low electrical resistivity
  • Microstructure
  • Spray Pneumatic (N)
  • Ultraviolet and green PL-emissions

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Highly oriented and conducting Bi doped ZnO (BZO) layers chemically sprayed using nitrogen gas carrier. / Chouikh, F.; Beggah, Y.; Tabet, Nouar; Ariche, N.; Aida, M. S.

In: Materials Science in Semiconductor Processing, Vol. 64, 15.06.2017, p. 39-46.

Research output: Contribution to journalArticle

@article{3255f6d955dc404aa9c837a07ff2ab48,
title = "Highly oriented and conducting Bi doped ZnO (BZO) layers chemically sprayed using nitrogen gas carrier",
abstract = "In this work, we have successfully prepared the highly conducting and transparent Bi doped ZnO (BZO) thin films using pneumatic spray pyrolysis technique with nitrogen (N2) carrier gas. The evolutions of structural, morphological and opto-electrical properties of the BZO films as a function of Bi concentration were analyzed. It is found that the films are uniform with no haze or visible clusters. X-ray diffraction shows that all the films were polycrystalline with hexagonal wurtzite structure, without secondary phases. All the BZO layers exhibit the classical preferential orientation of (002) plane and it changes in favor of (100) plane at 3 wt{\%} Bi. The BZO thin films showed 83{\%} as a value of average optical transmittance in the visible region. The optical band gap values oscillated around 3.23 and 3.27 eV. The SEM micrographs show clusters and nano-crystalline grains with special shape on the surface. The photoluminescence spectra of the films exhibits ultraviolet and green emissions. The electrical resistivity reaches a minimum value (8.4310−3 Ωcm) at 1 wt{\%} Bi.",
keywords = "Bi doped ZnO, Low electrical resistivity, Microstructure, Spray Pneumatic (N), Ultraviolet and green PL-emissions",
author = "F. Chouikh and Y. Beggah and Nouar Tabet and N. Ariche and Aida, {M. S.}",
year = "2017",
month = "6",
day = "15",
doi = "10.1016/j.mssp.2017.03.011",
language = "English",
volume = "64",
pages = "39--46",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Highly oriented and conducting Bi doped ZnO (BZO) layers chemically sprayed using nitrogen gas carrier

AU - Chouikh, F.

AU - Beggah, Y.

AU - Tabet, Nouar

AU - Ariche, N.

AU - Aida, M. S.

PY - 2017/6/15

Y1 - 2017/6/15

N2 - In this work, we have successfully prepared the highly conducting and transparent Bi doped ZnO (BZO) thin films using pneumatic spray pyrolysis technique with nitrogen (N2) carrier gas. The evolutions of structural, morphological and opto-electrical properties of the BZO films as a function of Bi concentration were analyzed. It is found that the films are uniform with no haze or visible clusters. X-ray diffraction shows that all the films were polycrystalline with hexagonal wurtzite structure, without secondary phases. All the BZO layers exhibit the classical preferential orientation of (002) plane and it changes in favor of (100) plane at 3 wt% Bi. The BZO thin films showed 83% as a value of average optical transmittance in the visible region. The optical band gap values oscillated around 3.23 and 3.27 eV. The SEM micrographs show clusters and nano-crystalline grains with special shape on the surface. The photoluminescence spectra of the films exhibits ultraviolet and green emissions. The electrical resistivity reaches a minimum value (8.4310−3 Ωcm) at 1 wt% Bi.

AB - In this work, we have successfully prepared the highly conducting and transparent Bi doped ZnO (BZO) thin films using pneumatic spray pyrolysis technique with nitrogen (N2) carrier gas. The evolutions of structural, morphological and opto-electrical properties of the BZO films as a function of Bi concentration were analyzed. It is found that the films are uniform with no haze or visible clusters. X-ray diffraction shows that all the films were polycrystalline with hexagonal wurtzite structure, without secondary phases. All the BZO layers exhibit the classical preferential orientation of (002) plane and it changes in favor of (100) plane at 3 wt% Bi. The BZO thin films showed 83% as a value of average optical transmittance in the visible region. The optical band gap values oscillated around 3.23 and 3.27 eV. The SEM micrographs show clusters and nano-crystalline grains with special shape on the surface. The photoluminescence spectra of the films exhibits ultraviolet and green emissions. The electrical resistivity reaches a minimum value (8.4310−3 Ωcm) at 1 wt% Bi.

KW - Bi doped ZnO

KW - Low electrical resistivity

KW - Microstructure

KW - Spray Pneumatic (N)

KW - Ultraviolet and green PL-emissions

UR - http://www.scopus.com/inward/record.url?scp=85015380521&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015380521&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2017.03.011

DO - 10.1016/j.mssp.2017.03.011

M3 - Article

AN - SCOPUS:85015380521

VL - 64

SP - 39

EP - 46

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -