High-voltage generation with stacked photodiodes in standard cmos process

M. K. Law, Amine Bermak

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

In this letter, a method to generate a high open-circuit voltage using integrated photodiodes fabricated in a standard CMOS process is described. In contrast to conventional high-voltage generation schemes that serially connect photodiodes using different substrates or high-cost silicon-on-insulator processes, the proposed scheme preserves a single substrate solution using a low-cost standard CMOS process. The proposed scheme exploits the photocurrent generation capabilities of different photodiode implementations available in a standard CMOS process and provides compensation for parasitic losses to generate a high output voltage using series connections of photodiodes. Output voltages of 0.84 and 1.3 V are successfully generated by two-stage and three-stage photodiode connections using an AMS 0.35-μ/m standard CMOS process, respectively. Our proposed scheme is therefore suitable for low-cost high-integration-level system-on-chip implementations utilizing integrated solar energy harvesting with high-voltage generation.

Original languageEnglish
Article number5605223
Pages (from-to)1425-1427
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
Publication statusPublished - Dec 2010
Externally publishedYes

Fingerprint

Photodiodes
Electric potential
Costs
Energy harvesting
Silicon
Open circuit voltage
Substrates
Photocurrents
Solar energy

Keywords

  • Energy harvesting
  • high open-circuit voltage
  • stacked integrated photodiodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

High-voltage generation with stacked photodiodes in standard cmos process. / Law, M. K.; Bermak, Amine.

In: IEEE Electron Device Letters, Vol. 31, No. 12, 5605223, 12.2010, p. 1425-1427.

Research output: Contribution to journalArticle

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