High temperature annealing of bent multicrystalline silicon rods

Torunn Ervik, Maulid Kivambe, Gaute Stokkan, Birgit Ryningen, Otto Lohne

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Dislocation etch-pit structures on multicrystalline silicon rods deformed at 900 °C in four-point bending were studied prior to and after a high-temperature annealing. After deformation, the majority of the dislocation etch-pits were aligned along traces of {1 1 1} planes. Certain localized areas revealed network structures, where etch-pit arrays deviated in the range of 2-10° from the {1 1 1} plane traces. After annealing at 1350 °C for 12 h, a marked change in dislocation density and structure which varied from grain to grain was observed. Some grains showed incomplete polygonized structures, with notable irregularities and Y-junctions. The results were compared with observations on as-cast industrial multicrystalline silicon wafers for solar cells, where similar incomplete polygonized structures can be found.

Original languageEnglish
Pages (from-to)6762-6769
Number of pages8
JournalActa Materialia
Volume60
Issue number19
DOIs
Publication statusPublished - Nov 2012
Externally publishedYes

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Silicon
Annealing
Silicon wafers
Temperature
Solar cells

Keywords

  • Dislocation structures
  • Plastic deformation
  • Recovery
  • Silicon
  • Solar cells

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Cite this

High temperature annealing of bent multicrystalline silicon rods. / Ervik, Torunn; Kivambe, Maulid; Stokkan, Gaute; Ryningen, Birgit; Lohne, Otto.

In: Acta Materialia, Vol. 60, No. 19, 11.2012, p. 6762-6769.

Research output: Contribution to journalArticle

Ervik, Torunn ; Kivambe, Maulid ; Stokkan, Gaute ; Ryningen, Birgit ; Lohne, Otto. / High temperature annealing of bent multicrystalline silicon rods. In: Acta Materialia. 2012 ; Vol. 60, No. 19. pp. 6762-6769.
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