>1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method

Maulid Kivambe, Douglas M. Powell, Mallory Ann Jensen, Ashley E. Morishige, Kazuo Nakajima, Ryota Murai, Kohei Morishita, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We evaluate the performance and gettering response of n-type ingot silicon material grown by the noncontact crucible method for photovoltaic applications. As-grown lifetimes are >150 μs and relatively homogeneous through the ingot. We apply standard and extended gettering profiles to elucidate gettering response. Effective minority carrier lifetimes are greater than 700 μs and 1.8 ms at an injection condition of 1015 cm-3 after standard and extended gettering schemes, respectively, on samples from near the top of an ingot. Unlike the as-grown state, the wafer lifetime distribution in gettered samples is not homogeneous. In wafers from lower parts of the ingot, concentric-swirl patterns of lower lifetime are revealed after gettering. We hypothesize that gettering removes a large percentage of fast-diffusing impurities, while defect striations similar to swirl microdefects found in Czochralski silicon can in some cases continue to limit lifetimes after gettering. These results indicate that, by application of a tailored gettering process, silicon materials grown by the noncontact crucible method can achieve lifetimes that can readily support high-efficiency solar cells, while highlighting areas for further material improvement.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2988-2990
Number of pages3
ISBN (Print)9781479943982
DOIs
Publication statusPublished - 15 Oct 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver
Duration: 8 Jun 201413 Jun 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CityDenver
Period8/6/1413/6/14

Fingerprint

Crucibles
Silicon
Ingots
Carrier lifetime
Solar cells
Impurities
Defects

Keywords

  • defect engineering
  • gettering
  • impurities
  • lifetime
  • noncontact crucible method
  • passivation
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kivambe, M., Powell, D. M., Ann Jensen, M., Morishige, A. E., Nakajima, K., Murai, R., ... Buonassisi, T. (2014). >1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2988-2990). [6925560] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925560

>1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method. / Kivambe, Maulid; Powell, Douglas M.; Ann Jensen, Mallory; Morishige, Ashley E.; Nakajima, Kazuo; Murai, Ryota; Morishita, Kohei; Buonassisi, Tonio.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2988-2990 6925560.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kivambe, M, Powell, DM, Ann Jensen, M, Morishige, AE, Nakajima, K, Murai, R, Morishita, K & Buonassisi, T 2014, >1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925560, Institute of Electrical and Electronics Engineers Inc., pp. 2988-2990, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, 8/6/14. https://doi.org/10.1109/PVSC.2014.6925560
Kivambe M, Powell DM, Ann Jensen M, Morishige AE, Nakajima K, Murai R et al. >1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2988-2990. 6925560 https://doi.org/10.1109/PVSC.2014.6925560
Kivambe, Maulid ; Powell, Douglas M. ; Ann Jensen, Mallory ; Morishige, Ashley E. ; Nakajima, Kazuo ; Murai, Ryota ; Morishita, Kohei ; Buonassisi, Tonio. / >1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2988-2990
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