Growth-rate induced epitaxial orientation of CeO2 on Al 2O3(0001)

Satyanarayana V.N.T. Kuchibhatla, P. Nachimuthu, F. Gao, W. Jiang, V. Shutthanandan, M. H. Engelhard, S. Seal, S. Thevuthasan

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    High-quality CeO2 films were grown on Al2O 3 (0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the films is found to be CeO2 (100) and CeO2 (111) at low (<8 Å/min) and higher growth rates (>12 Å/min), respectively. CeO2(100) film grows as three-dimensional islands, while CeO2 (111) film grows as two-dimensional layers. The CeO2(100) film exhibits better epitaxial quality compared to CeO2(111) film. However, the CeO2 (100) film on Al2O3(0001) shows three in-plane domains at 30° to each other. While the epitaxial quality is attributed to the close match between oxygen sublattices of CeO2(100) and Al 2O3(0001), the three in-plane domains in CeO2 (100) are attributed to the threefold symmetry of the substrate. The relative stability of different epitaxial orientations of CeO2 films on Al2O3 (0001) obtained from molecular dynamics simulations strongly supports the experimental observations.

    Original languageEnglish
    Article number204101
    JournalApplied Physics Letters
    Issue number20
    Publication statusPublished - 1 Jun 2009


    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Kuchibhatla, S. V. N. T., Nachimuthu, P., Gao, F., Jiang, W., Shutthanandan, V., Engelhard, M. H., Seal, S., & Thevuthasan, S. (2009). Growth-rate induced epitaxial orientation of CeO2 on Al 2O3(0001). Applied Physics Letters, 94(20), [204101].