Growth of YBa2Cu3O7/CeO2/Al2O 3 heteroepitaxial films by aerosol MOCVD

K. Fröhlich, D. Machajdík, I. Vávra, J. Šouc, A. Rosová, A. Figueras, F. Weiss, K. H. Dahmen

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Abstract

We have prepared YBa2Cu3O7 thin superconducting films on (1102) Al2O3 substrate with CeO2 buffer layer using an aerosol MOCVD process. Texture analysis using X-ray diffraction showed a high degree of epitaxial character of both YBa2Cu3O7 and CeO2 films. Study of the microstructure of the YBa2Cu3O7 layer and YBa2Cu3O7/CeO2 and CeO2/Al2O3 interfaces by transmission electron microscopy revealed relaxation of the CeO2 and YBa2Cu3O7 layers. The films exhibited a critical temperature Tc(R=0)=84-88 K, resistivity at room temperature of 600 μΩ cm, a resistivity ratio ρ(300 K)(100 K) higher than 3 and critical current density up to 3x109 A cm-2 at T=77 K.

Original languageEnglish
Pages (from-to)284-287
Number of pages4
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
DOIs
Publication statusPublished - Apr 1997

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Keywords

  • Heteroepitaxy
  • MOCVD
  • Superconductivity
  • Thin films

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Fröhlich, K., Machajdík, D., Vávra, I., Šouc, J., Rosová, A., Figueras, A., Weiss, F., & Dahmen, K. H. (1997). Growth of YBa2Cu3O7/CeO2/Al2O 3 heteroepitaxial films by aerosol MOCVD. Journal of Alloys and Compounds, 251(1-2), 284-287. https://doi.org/10.1016/S0925-8388(96)02695-3