Thin films of CeO2, Nd2O3 and Nd2CuO4 were prepared by MOCVD on quartz, sapphire, MgO and Si. The usual β-diketonato complexes were used as precursors. Preliminary information about the thermal stability and possible fragmentation of the precursors was obtained by thermal analysis and mass spectrometry. The good cristallinity of the films was demonstrated by XRD. In all three compounds a preferential orientation was found. The morphology and elemental distribution on the films was investigated by profilometry and EMPA. For the deposition of CeO2 films from the precursor Ce(dpm)4 a variety of carrier and reaction gases were investigated.
|Number of pages||4|
|Journal||Berichte der Bunsengesellschaft/Physical Chemistry Chemical Physics|
|Publication status||Published - 1 Jan 1991|
ASJC Scopus subject areas
- Chemical Engineering(all)