Growth of thin films of lanthanide oxides and lanthanide copper oxides by MOCVD

Tobias Gerfin, Michael Becht, Klaus Hermann Dahmen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Thin films of CeO2, Nd2O3 and Nd2CuO4 were prepared by MOCVD on quartz, sapphire, MgO[100] and Si[100]. The usual β-diketonato complexes were used as precursors. Preliminary information about the thermal stability and possible fragmentation of the precursors was obtained by thermal analysis and mass spectrometry. The good cristallinity of the films was demonstrated by XRD. In all three compounds a preferential orientation was found. The morphology and elemental distribution on the films was investigated by profilometry and EMPA. For the deposition of CeO2 films from the precursor Ce(dpm)4 a variety of carrier and reaction gases were investigated.

Original languageEnglish
Pages (from-to)1564-1567
Number of pages4
JournalBerichte der Bunsengesellschaft/Physical Chemistry Chemical Physics
Volume95
Issue number11
Publication statusPublished - 1 Nov 1991
Externally publishedYes

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Lanthanoid Series Elements
Copper oxides
Metallorganic chemical vapor deposition
Rare earth elements
Oxides
Thin films
Quartz
Profilometry
Aluminum Oxide
Sapphire
Thermoanalysis
Mass spectrometry
Thermodynamic stability
Gases

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Growth of thin films of lanthanide oxides and lanthanide copper oxides by MOCVD. / Gerfin, Tobias; Becht, Michael; Dahmen, Klaus Hermann.

In: Berichte der Bunsengesellschaft/Physical Chemistry Chemical Physics, Vol. 95, No. 11, 01.11.1991, p. 1564-1567.

Research output: Contribution to journalArticle

Gerfin, Tobias ; Becht, Michael ; Dahmen, Klaus Hermann. / Growth of thin films of lanthanide oxides and lanthanide copper oxides by MOCVD. In: Berichte der Bunsengesellschaft/Physical Chemistry Chemical Physics. 1991 ; Vol. 95, No. 11. pp. 1564-1567.
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