Growth of oxide layer on germanium (011) substrate under dry and wet atmospheres

Nouar Tabet, J. Al-Sadah, M. Salim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.

Original languageEnglish
Pages (from-to)1053-1060
Number of pages8
JournalSurface Review and Letters
Volume6
Issue number6
Publication statusPublished - 1 Dec 1999
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

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